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RB218NS-30 fiches techniques PDF

ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB218NS-30
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB218NS-30 fiche technique
Schottky Barrier Diode
RB218NS-30
Data Sheet
lApplication
Switching power supply
lFeatures
1) Cathode common dual type
2) High reliability
3) Super low IR
lDimensions (Unit : mm)
(2)
RB218
NS30
1
(1) (3)
lLand size figure (Unit : mm)
11
9.9
2.5
2.54
TO-263S
2.54
lStructure
(2) Cathode
lConstruction
Silicon epitaxial planar type
ROHM : TO-263S JEITA : SC-83
1 : Manufacture date
lTaping specifications (Unit : mm)
(1) Anode (3) Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
35 V
Reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Operating junction temperature
VR
Io
IFSM
Tj
Direct reverse voltage
60Hz half sin wave, resistive load,
IO/2 per diode, Tc=120ºC Max.
60Hz half sin wave, Non-repetitive at
Ta=25ºC , 1cycle, per diode
-
30 V
20 A
100 A
150 °C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical and Thermal Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
VF IF=10A - - 0.72 V
Reverse current
IR
VR=30V
- - 5 mA
Thermal resistance
Rth(j-c)
Junction to case
- - 2 °C/W
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/3
2016.01 - Rev.A

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