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Numéro de référence | RB215T-60NZ | ||
Description | Schottky Barrier Diode | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
Schottky barrier diode
RB215T-60NZ
Applications
Switching power supply
Features
1)Cathode common type.(TO-220)
2)Low IR
3)High reliability
Construcion
Silicon epitaxal planar
Dimensions (Unit : mm)
10.0±0.3
0.1
4.5±0.3
0.1
2.8±0.2
0.1
①
1.2
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
2.6±0.5
ROHM : TO220FN
① Manufacture Date
Data Sheet
Structure
(1) (2) (3)
●Packing Dimensions (Unit : mm)
7
540
34.5
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM 60
VR 60
Io 20
Forward current surge peak (60Hz/1cyc) (*1)
Junction temperature
IFSM
Tj
100
150
Storage temperature
Tstg 40 to 150
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=116C
Unit
V
V
A
A
C
C
Elecrical characteristic(Ta=25C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol
VF
IR
jc
Min. Typ. Max.
- - 0.58
- - 600
- - 1.75
Unit
V
μA
C/W
Conditions
IF=10A
VR=60V
junction to case
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/3
2016.09 - Rev.A
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Pages | Pages 6 | ||
Télécharger | [ RB215T-60NZ ] |
No | Description détaillée | Fabricant |
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