DataSheetWiki


RB215T-60NZ fiches techniques PDF

ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB215T-60NZ
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





1 Page

No Preview Available !





RB215T-60NZ fiche technique
Schottky barrier diode
RB215T-60NZ
Applications
Switching power supply
Features
1)Cathode common type.(TO-220)
2)Low IR
3)High reliability
Construcion
Silicon epitaxal planar
Dimensions (Unit : mm)
10.0±0.3
    0.1
4.5±0.3
    0.1
2.8±0.2
    0.1
1.2
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
2.6±0.5
ROHM : O220FN
Manufacture Date
Data Sheet
Structure
(1) (2) (3)
Packing Dimensions (Unit : mm)
7
540
34.5
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM 60
VR 60
Io 20
Forward current surge peak (60Hz/1cyc) (*1)
Junction temperature
IFSM
Tj
100
150
Storage temperature
Tstg 40 to 150
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=116C
Unit
V
V
A
A
C
C
Elecrical characteristic(Ta=25C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol
VF
IR
jc
Min. Typ. Max.
- - 0.58
- - 600
- - 1.75
Unit
V
μA
C/W
Conditions
IF=10A
VR=60V
junction to case
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/3
2016.09 - Rev.A

PagesPages 6
Télécharger [ RB215T-60NZ ]


Fiche technique recommandé

No Description détaillée Fabricant
RB215T-60NZ Schottky Barrier Diode ROHM Semiconductor
ROHM Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche