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RB205T-60NZ fiches techniques PDF

ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB205T-60NZ
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB205T-60NZ fiche technique
Schottky barrier dio de
RB205T-60NZ
Applications
Switching power supply
Dimensions (Unit : mm)
Features
1) Cathode common type.
(TO-220)
2) Low IR
3) High reliability
Construction
Silicon epitaxial planer
205
6
Data Sheet
Structure
(1) (2) (3)
Packing Dimensions (Unit : mm)
7
540
34.5
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM 60
VR 60
Io 15
Forward current surge peak (60Hz / 1cyc) (*1)
Junction temperature
IFSM
Tj
100
150
Storage temperature
Tstg 40 to 150
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=125C
Electrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol Min. Typ. Max.
VF - - 0.58
IR - - 600
jc - - 2
Unit
V
V
A
A
C
C
Unit
V
A
C/W
Conditions
IF=7.5A
VR=60V
junction to case
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/3
2016.09 - Rev.A

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