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INCHANGE - Silicon PNP Power Transistor

Numéro de référence BD938F
Description Silicon PNP Power Transistor
Fabricant INCHANGE 
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BD938F fiche technique
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD934F/936F/938F/940F/942F
DESCRIPTION
·DC Current Gain-
: hFE= 40(Min)@ IC= -150mA
·Complement to Type BD933F/935F/937F/939F/941F
APPLICATIONS
·Designed for use in output stages of audio and television
amplifier circuits where high peak powers can occur.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
BD934F
-45
BD936F
-60
VCBO
Collector-Base Voltage BD938F
-100
V
BD940F
-120
BD942F
-140
BD934F
-45
BD936F
-60
VCEO
Collector-Emitter Voltage BD938F
-80
V
BD940F
-100
BD942F
-120
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-3 A
ICM Collector Current-Peak
-7 A
IBB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
-0.5
19
150
-65~150
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
4.17 /W
Thermal Resistance,Junction to Ambient 55 /W
isc Websitewww.iscsemi.cn

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