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ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB168L150
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB168L150 fiche technique
Schottky Barrier Diode
RB168L150
lApplication
General rectification
lDimensions (Unit : mm)
2.6±0.15
Data Sheet
lLand Size Figure (Unit : mm)
2.0
lFeatures
1) Small power mold type
(PMDS)
2) High reliability
3) Super low IR
lConstruction
Silicon epitaxial planar type
12
0.1±0.02
1.5±0.2
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
1 2 : Manufacture Date
lTaping Dimensions (Unit : mm)
2.0±0.05
4.0±0.1
PMDS
lStructure
φf11..555±00..0055
Cathode
Anode
0.3
2.9±0.1
4.0±0.1
φf11..555
2.8MAX
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
150 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load, Tc=125ºC Max.
60Hz half sin wave, one cycle,
non-repetitive at Ta=25ºC
Operating junction temperature
Tj
-
150
1
30
150
V
A
A
°C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
VF IF=1.0A - - 0.84 V
IR
VR=150V
- - 4.0 mA
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.01 - Rev.A

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