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RB160SS-30 fiches techniques PDF

ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB160SS-30
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB160SS-30 fiche technique
Schottky Barrier Diode
RB160SS-30
lApplication
General rectification
lDimensions (Unit : mm)
Data Sheet
lLand Size Figure (Unit : mm)
0.8
lFeatures
1) Small power mold type
(KMD2)
2) High reliability
3) Low VF
lConstruction
Silicon epitaxial planar type
00.03
0.8±0.05
0.6±0.03
ROHM : KMD2
JEDEC : -
JEITA : -
: Dot (Year, week, factory)
0.7±0.05
lTaping Dimensions (Unit : mm)
KMD2
lStructure
(1) Cathode
(2) Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
30 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load
60Hz half sin wave, Non-repetitive at
Ta=25ºC , 1cycle
Operating junction temperature
Tj
-
30
1
5
150
V
A
A
°C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
VF1 IF=0.7A - - 0.49 V
VF2 IF=1.0A - - 0.52 V
IR1 VR=10V - - 10 mA
IR2 VR=30V - - 35 mA
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/4
2015.10 - Rev.A

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