DataSheetWiki


RB095T-40 fiches techniques PDF

ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB095T-40
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





1 Page

No Preview Available !





RB095T-40 fiche technique
Schottky barrier diode
RB095T-40
Applications
Switching power supply
Dimensions (Unit : mm)
Features
1) Cathode common type.
(TO-220)
2) Low IR
3) High reliability
Construction
Silicon epitaxial planer
Data Sheet
Structure
(1) (2) (3)
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM 45
VR 40
Io 6
Forward current surge peak (60Hz / 1cyc) (*1)
Junction temperature
IFSM
Tj
100
150
Storage temperature
Tstg 40 to 150
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=136C
Electrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol Min. Typ. Max.
VF - - 0.55
IR - - 0.1
jc - - 3
Unit
V
V
A
A
C
C
Unit
V
mA
C/W
Conditions
IF=3A
VR=40V
junction to case
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.E

PagesPages 4
Télécharger [ RB095T-40 ]


Fiche technique recommandé

No Description détaillée Fabricant
RB095T-40 Schottky Barrier Diode ROHM Semiconductor
ROHM Semiconductor
RB095T-40NZ Schottky Barrier Diode ROHM Semiconductor
ROHM Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche