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ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB088BM100
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB088BM100 fiche technique
Schottky Barrier Diode
RB088BM100
lApplication
Switching power supply
lDimensions (Unit : mm)
Data Sheet
lLand size figure (Unit : mm)
6.0
lFeatures
1) Power mold type (TO-252)
2) Cathode common dual type
3) High reliability
4) Super low IR
lConstruction
Silicon epitaxial planar type
1
ROHM : TO-252
JEITA : SC-63
1 : Manufacture Date
lTaping specifications (Unit : mm)
1.6 1.6
TO-252
2.3 2.3
lStructure
(2)
Cathode
(1) (3)
Anode Anode
lAbsolute maximum ratings (Tc= 25°C)
Parameter
Symbol
Limits
Unit
Conditions
Repetitive Peak Reverse Voltage
VRM 100 V Duty0.5
Reverse Voltage
Average forward rectified current
Non-repetitive Forward Current Surge Peak
Operating Junction Temperature
VR
Io
IFSM
Tj
100 V Direct Reverse Voltage
10
A
60Hz half sin Wave resistive load,
Tc=103°C max., 1/2 Io per diode
50
A
60Hz half sin wave,
Non-repetitive at Ta=25ºC, per diode
150 °C
-
Storage Temperature
Tstg -55 to +150 °C
-
lElectrical characteristics (Tj = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
Reverse current
VF - 0.74 0.87 V IF=5.0A
IR - 0.15 5 mA VR=100V
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/5
2014.10 - Rev.A

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