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Numéro de référence | RB068LAM-60TF | ||
Description | Schottky Barrier Diode | ||
Fabricant | ROHM Semiconductor | ||
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Schottky Barrier Diode
RB068LAM-60TF
Applications
General rectification
Features
1) Small power mold type
(PMDTM)
2) High reliability
3) Super low IR
Dimensions (Unit : mm)
2.50±0.20
(1)
0.17±
0.10
0.05
(2)
1.50±0.20
0.95±0.10
Datasheet
AEC-Q101 Qualified
Land Size Figure (Unit : mm)
2.0
PMDTM
Structure (1) Cathode
Construction
Silicon epitaxial planar type
ROHM : PMDTM
JEDEC : SOD-128
: Manufacture Date
Taping Dimensions (Unit : mm)
2.00 ±0.05
4.0 ±0.1
φ1.5
+0.1
-0.0
(2) Anode
0.25 ±0.05
φ1.5
+0.1
-0.0
2.8 ±0.05
4.0 ±0.1
1.25 ±0.10
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Operating junction temperature
Storage temperature
VRM
VR
IO
IFSM
Tj
Tstg
Conditions
Duty≦0.5
Direct reverse voltage
Glass epoxy board mounted, 60Hz half
sin wave, resistive load, Tc=125ºC Max.
60Hz half sin wave, onecycle,
non-repetitive at Ta=25ºC
-
-
Limits Unit
60 V
60 V
2A
70 A
150 °C
55 to 150 °C
Electrical Characteristics (Tj = 25°C)
Parameter
Symbol
Forward voltage
Reverse current
VF
IR
Conditions
IF=2.0A
VR=60V
Min. Typ. Max. Unit
- - 0.68 V
- - 2.0 A
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/4
2016.09 - Rev.A
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Pages | Pages 7 | ||
Télécharger | [ RB068LAM-60TF ] |
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