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RB068LAM-60TF fiches techniques PDF

ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB068LAM-60TF
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB068LAM-60TF fiche technique
Schottky Barrier Diode
RB068LAM-60TF
Applications
General rectification
Features
1) Small power mold type
(PMDTM)
2) High reliability
3) Super low IR
Dimensions (Unit : mm)
2.50±0.20
(1)
0.17±
0.10
0.05
(2)
1.50±0.20
0.95±0.10
Datasheet
AEC-Q101 Qualified
Land Size Figure (Unit : mm)
2.0
PMDTM
Structure (1) Cathode
Construction
Silicon epitaxial planar type
ROHM : PMDTM
JEDEC : SOD-128
: Manufacture Date
Taping Dimensions (Unit : mm)
2.00 ±0.05
4.0 ±0.1
φ1.5
+0.1
-0.0
(2) Anode
0.25 ±0.05
φ1.5
+0.1
-0.0
2.8 ±0.05
4.0 ±0.1
1.25 ±0.10
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Operating junction temperature
Storage temperature
VRM
VR
IO
IFSM
Tj
Tstg
Conditions
Duty0.5
Direct reverse voltage
Glass epoxy board mounted, 60Hz half
sin wave, resistive load, Tc=125ºC Max.
60Hz half sin wave, onecycle,
non-repetitive at Ta=25ºC
-
-
Limits Unit
60 V
60 V
2A
70 A
150 °C
55 to 150 °C
Electrical Characteristics (Tj = 25°C)
Parameter
Symbol
Forward voltage
Reverse current
VF
IR
Conditions
IF=2.0A
VR=60V
Min. Typ. Max. Unit
- - 0.68 V
- - 2.0 A
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/4
2016.09 - Rev.A

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