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ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB058L-60
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB058L-60 fiche technique
RB058L-60
Data Sheet
Schottky Barrier Diode
RB058L-60
lApplications
General rectification
lExternal Dimensions(Unit : mm)
2.6±0.2
lFeatures
1)Small power mold type.(PMDS)
2)High reliability
3)AEC-Q101 qualified
lConstruction
Silicon epitaxial
93
12
0.1±0.02
    0.1
1.5±0.2
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
1 2 Manufacture Date
lTaping Dimensions(Unit : mm)
2.0±0.05
4.0±0.1
lLand Size Figure(Unit : mm)
2.0
PMDS
lStructure
φ 1.55±0.05
0.3
2.9±0.1
4.0±0.1
lAbsolute Maximum Ratings(Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
VRM
VR
Average rectified forward current (*1)
Io
Forward current surge peak (60Hz1cyc)
IFSM
Junction temperature
Tj
Storage temperature
Tstg
(*1)Mounting on epoxi board. 180°Half sine wave
lElectrical Characteristics(Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol
VF
IR
Limits
60
60
3
70
150
-55 to +150
Min. Typ. Max.
- - 0.64
- - 4.0
φ 1.55
Unit
V
V
A
A
°C
°C
2.8MAX
Unit Conditions
V IF=3.0A
mA VR=60V
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/4
2012.08 - Rev.A

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