DataSheetWiki


BAS40-06HM fiches techniques PDF

ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence BAS40-06HM
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





1 Page

No Preview Available !





BAS40-06HM fiche technique
Schottky Barrier Diode
BAS40-06HM
Datasheet
Application
Small current rectification
Dimensions (Unit : mm)
Land Size Figure (Unit : mm)
1.9
Features
1) Small mold type
(SOT-23)
2) High reliability
3) Low VF
Construction
Silicon epitaxial planar type
4C
ROHM : SSD3
JEDEC : SOT-23
JEITA : -
Taping Dimensions (Unit : mm)
2.4
1.0MIN
SOT-23
0.8MIN
Structure
(3) (1) Cathode
(2) Cathode
(3) Anode
(1) (2)
T116
Absolute Maximum Ratings (Ta= 25°C)
Parameter
Symbol
Repetitive peak reverse voltage
VRM
Reverse voltage
VR
Average forward rectified current
IF
Repetitive peak forward current
IFRM
Non-repetitive forward surge current IFSM
Operating junction temperature
Tj
Storage temperature
Tstg
Electrical Characteristics (Tj= 25°C)
Parameter
Symbol
VF1
Forward voltage
VF2
VF3
Reverse current
IR1
IR2
Conditions
Duty0.5
Direct reverse voltage
Direct current, per diode
t 1s, Duty0.5, per diode
Square wave, tp<10ms,
non-repetitive at Ta=25ºC, per diode
-
-
Limits Unit
40 V
40 V
120 mA
120 mA
0.6 A
150 °C
55 to 150 °C
Conditions
IF=1mA
IF=10mA
IF=40mA
VR=30V
VR=40V
Min. Typ. Max. Unit
- - 0.38 V
- - 0.50 V
- - 1V
- - 1 A
- - 10 A
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/3
2016.11 - Rev.B

PagesPages 7
Télécharger [ BAS40-06HM ]


Fiche technique recommandé

No Description détaillée Fabricant
BAS40-06HM Schottky Barrier Diode ROHM Semiconductor
ROHM Semiconductor
BAS40-06HT1 Comon Anode Schottky Barrier Diode Leshan Radio Company
Leshan Radio Company

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche