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Datasheet WFJ8N65B-PDF.HTML Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category


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N.º Número de pieza Descripción Fabricantes Catagory
1WFJ5N65BSilicon N-Channel MOSFET

Features � 4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V � Ultra-low Gate charge(Typical13.3nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) WFJ5N65B Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advan
Winsemi
Winsemi
mosfet
2WFJ8N65BPower MOSFET, Transistor

Features � 7.5A,650V,RDS(on)(Max1.3Ω )@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximum Junction Temperature Range(150℃) WFJ8N65B Silicon N-Channel MOSFET General Description This Power MO
Winsemi
Winsemi
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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