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PDF WFF12N65S Data sheet ( Hoja de datos )
| Número de pieza | WFF12N65S | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Winsemi | |
| Logotipo |  |
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WFF12N65S
650V Super-Junction Power MOSFET
Features
� Ultra low Rdson
� Ultra low gate charge (typ. Qg = 28nC)
� 100% UIS tested
� RoHS compl iant
� Maximum Junction Temperature Range(150℃)
General Description
Power MOSFET is fabricated using advanced super junction
technology. The resulting device has extremely low on
resistance, making it especially suitable for applications which
require superior power density and outstanding efficiency.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
I DM
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Drain Current Pulsed 1)
VGS Gate to Source Voltage
EAS Single Pulse Avalanche Energy 2)
IAR Single Pulse Avalanche Current 1)
EAR Repetitive Avalanche Energy 1)
Total Power Dissipation(@Tc=25℃)
PD -Derate above 25℃
TJ Junction Temperature
Tstg Storage Temperature
Is Continuous diode forward current
Is,pulse Diode pulse current
Notes:
1.Repetitive Rating:Pulse width limited by maximum Junction Temperature
2.IAS=3.5,VDD=60V,R G=25Ω ,Starting TJ=25℃
Value
650
12
30
±30
350
12
12.5
33
0.26
150
-55~150
12
30
Units
V
A
A
V
mJ
A
mJ
W
℃
℃
A
A
Thermal Characteristics
Symbol
Parameter
R θJC
RθJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction -to -Ambient
Value
Units
Min Typ Max
- - 3.8 ℃/W
- - 80 ℃/W
WT-F042-Rev.A1 Nov.2013
Copyr ight@Winsemi Microelectronics Co., Ltd., All right reserved.
1 page  
WFF12N65S
Fig.12 Gate Charge Test Circuit & Waveform
Fig.13 Switching Test Circuit & Waveforms
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
Steady, keep you advance
5/ 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet WFF12N65S.PDF ] | |
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