DataSheetWiki


VS-16CDH02HM3 fiches techniques PDF

Vishay - Hyperfast Rectifier

Numéro de référence VS-16CDH02HM3
Description Hyperfast Rectifier
Fabricant Vishay 
Logo Vishay 





1 Page

No Preview Available !





VS-16CDH02HM3 fiche technique
www.vishay.com
VS-16CDH02HM3
Vishay Semiconductors
Hyperfast Rectifier, 2 x 8 A FRED Pt®
K
1
2
Top View
Bottom View
TO-263AC (SMPD)
K
Cathode
Anode 1
Anode 2
FEATURES
• Hyperfast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr
TJ max.
Diode variation
TO-263AC (SMPD)
2x8A
200 V
0.77 V
27 ns
175 °C
Dual die
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, telecom, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
per device
per diode
Non-repetitive peak surge current
per device
per diode
SYMBOL
VRRM
IF(AV)
IFSM
TEST CONDITIONS
Tsolder pad = 155 °C
TJ = 25 °C, 6 ms square pulse
VALUES
200
16
8
190
100
UNITS
V
A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
200
Forward voltage, per diode
IF = 8 A
VF
IF = 8 A, TJ = 150 °C
-
-
Reverse leakage current, per diode
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
-
-
Junction capacitance, per diode
CT VR = 200 V
-
TYP.
-
0.93
0.77
-
6
23
MAX.
-
1.03
0.87
2
100
-
UNITS
V
μA
pF
Revision: 10-Feb-15
1 Document Number: 95813
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PagesPages 7
Télécharger [ VS-16CDH02HM3 ]


Fiche technique recommandé

No Description détaillée Fabricant
VS-16CDH02HM3 Hyperfast Rectifier Vishay
Vishay

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche