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WSAD92-02N fiches techniques PDF

Winsemi - Ultrafast Dual Diode

Numéro de référence WSAD92-02N
Description Ultrafast Dual Diode
Fabricant Winsemi 
Logo Winsemi 





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WSAD92-02N fiche technique
WSAD92-02N Product Description
20A,200V Ultrafast Dual Diode
Features
Ultrafast recovery time
Low forward voltage drop
Low leakage current
High reliability by planer design
Maximum Junction Temperature Range(175)
General Description
Winsemi's WSAD92-02N is the state of the are Ultra fast Recovery
rectifiers designed with optimized performance of forward voltage drop
and ultra fast recovery time .The planar structure and the platinum
doped life time,control guarantee the best overall
performance,ruggedness and reliability characteristics.
Applications
Switching power Supplies
Uninterruptable Power Supplies
Power Switching circuits
General Purpose
Absolute Maximum Ratings
Symbol
Parameter
VRRM
IF(AV)
Peak Repetitive Reverse voltage
Average Out Current Square wave,duty=1/2,Tc=115
IFSM Repetitive Peak Surge Current
TSTG,TJ
Operating Junction Temperature & Storage Temperature
Electeical Characteristics (Tc=25unless otherwise noted)
Symbol
Parameter
Test Conditions
VF
IRRM
trr
Rth(J-C)
Forward Voltage Dorp
Reverse Current
Reverse Recovery Time
Thermal Resistance
IF=20A
IF=10A,Tc=125
VR=200V
VR=200V,Tc=150
IF=20A,dlF/dt=100µs
C
A1 A2
Value
200
20
100
-55-~175
Units
V
A
A
Value
Min Typ
--
--
-5
--
--
--
Max
1.15
0.8
15
4
30
1.5
Units
V
V
µA
mA
ns
/W
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WIN SEM I M ICROELECTRON ICS
WT-D005-Rev.A0 Mar.2014
WIN SEM I M ICROELECTRON ICS
0314

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