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PDF WFU4N65S Data sheet ( Hoja de datos )
| Número de pieza | WFU4N65S | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Winsemi | |
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WFU4N65S Product Description
650V Super-Junction Power MOSFET
Features
� Ultra low Rdson
� Ultra low gate charge (typ. Qg =13nC)
� 100% UIS tested
� RoHS compliant
General Description
Power MOSFET is fabricated using advanced super junction
technology. The resulting device has extremely low on resistance,
making it especially suitable for applications which require superior
power density and outstanding efficiency.
Absolute Maximum Ratings
Symbol
VDSS
Drain Source Voltage
Continuous Drain Current (Tc=25℃)
ID (Tc=100℃)
Parameter
IDM Drain Current Pulsed 1)
VGS Gate to Source Voltage
EAS Single Pulse Avalanche Energy 2)
IAR Single Pulse Avalanche Current 1)
EAR Repetitive Avalanche Energy 1)
Total Power Dissipation(@Tc=25℃)
PD -Derate above 25℃
TJ Junction Temperature
Tstg Storage Temperature
Is Continuous diode forward current
Is,pulse
Diode pulse current
Notes:
1.Repetitive Rating:Pulse width limited by maximum Junction Temperature
2.IAS=2A,VDD=60V,RG=25Ω,Starting TJ=25℃
Thermal Characteristics
Symbol
Parameter
RQJC Thermal Resistance , Junction -to -Case
RQJA Thermal Resistance , Junction-to -Ambient
D
G
S
Value
650
4
2.5
12
±30
130
4
0.4
50
0.4
150
-55~150
4
12
Units
V
A
A
V
mJ
A
mJ
W
W/℃
℃
℃
A
A
Value
Units
Min Typ Max
- - 2.5 ℃/W
- - 62 ℃/W
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
Copyr ight@Winsemi Microelectronics Co., Ltd., All right reserved.
WIN SEM I M ICROELECTRON ICS
WT-F051-Rev.A1 Nov.2013
WIN SEM I M ICROELECTRON ICS
0309
1 page  
WFU4N65S Product Description
650V Super-Junction Power MOSFET
VG S
10mA
R L VG S
10V
VD S
Qg s
Qg
Qg d
DUT
C harge
Fig.12 Gate Charge Test Circuit & Waveform
10V
VD S
VG S
RG
RL
VD D
DUT
VD S 9 0 %
VG S 1 0 %
td(on) tr
to n
td( off) tf
to f f
Fig.13 Switching Test Circuit & Waveforms
V ds
Id
V gs
Rg
V gs
L
V gs
DUT
EA R =1/2LI
2
AR
+
VDC V dd
-
V ds
Id
V gs
B V DSS
IA R
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
www.winsemi.com Tel : 0755-82506288 Fax : 0755-82506299
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
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