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PDF WFF2N60 Data sheet ( Hoja de datos )
| Número de pieza | WFF2N60 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Winsemi | |
| Logotipo |  |
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WFF2N60
Silicon N-Channel MOSFET
Features
■2A,600V, RDS(on)(Max 5Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 9.0nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Isolation Voltage ( VISO = 4000V AC )
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a
high rugged avalanche characteristics. This devices is
specially well suited for high efficiency switch mode power
supply.
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TJ, Tstg
TL
Parameter
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
Junction and Storage Temperature
Channel Temperature
*Drain current limited by junction temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note1)
(Note 2)
(Note 1)
(Note 3)
Value
600
2.0*
1.5*
9.5*
±30
140
2.8
4.5
23
0.18
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
Value
Min Typ Max
- - 5.5
- - 62.5
Units
℃/W
℃/W
Re v. B1 N ov. 2007
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
T03-2
1 page  
WFF2N60
Fig.10 Gate Test Circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Unclamped Inductive Switching Test Circuit & Waveform
Steady, keep you advance
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WFF2N60.PDF ] | |
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