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WFF15N60 fiches techniques PDF

Winsemi - Power MOSFET ( Transistor )

Numéro de référence WFF15N60
Description Power MOSFET ( Transistor )
Fabricant Winsemi 
Logo Winsemi 





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WFF15N60 fiche technique
WFF15N60 Product Description
Silicon N-Channel MOSFET
Features
15A,600V, RDS(on)(Max0.52Ω)@VGS=10V
Ultra-low Gate charge(Typical 36nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,DMOS technology.This latest technology has been especially
designed to minimize on-state resistance, have a high rugged avalanche
characteristics .This devices is specially well suited for high efficiency
switch model power supplies, power factor correction and half bridge and
full bridge resonant topology line a electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
D
G
S
(Note1)
(Note2)
note 1
(Note1)
(Note3)
Value
600
15*
9.5*
60*
±30
245
15
23.9
9.8
53
0.42
-55~150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ ns
W
W/
Value
Min Typ Max
- - 2.36
- - 62.5
Units
/W
/W
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEM I M ICROELECTRONICS
WT-F058-Rev.A1 Jan.2014
WINSEM I M ICROELECTRONICS

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