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Winsemi - Silicon N-Channel MOSFET

Numéro de référence K2611B
Description Silicon N-Channel MOSFET
Fabricant Winsemi 
Logo Winsemi 





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K2611B fiche technique
K2611B Product Description
Silicon N-Channel MOSFET
Features
11A,900V, RDS(on)(Max1.10Ω)@VGS=10V
Ultra-low Gate charge(Typical 66nC)
Fast Switching Capability
100%Avalanche Tested
Improved dv/dt capability
RoHS product
General Description
This N-Channel enhancement mode power field effect transistors are
produced using Winsemi's proprietary, planar stripe ,DMOS technology.
This advanced technology has been especially tailored to minimize
on-state resistance , provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power
supplies.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ Junction Temperature
Tstg Storage Temperature
TL Channel Temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
D
G
S
(Note1)
(Note2)
(Note1)
(Note1)
(Note3)
Value
900
11
6.9*
44
±30
970
11
30.1
4.1
277
2.22
150
-55~150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ ns
W
W/
Value
Min Typ Max
- - 0.45
- - 40
Units
/W
/W
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEM I M ICROELECTRONICS
WT-F055-Rev.A1 Jan.2014
WINSEM I M ICROELECTRONICS

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