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IPB080N03LG fiches techniques PDF

Infineon - Power-Transistor

Numéro de référence IPB080N03LG
Description Power-Transistor
Fabricant Infineon 
Logo Infineon 





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IPB080N03LG fiche technique
Type
!"#$%!&3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
IPP080N03L G
IPB080N03L G
Product Summary
V DS
R DS(on),max
ID
IPP080N03L G
IPB080N03L G
30 V
8.0 mW
50 A
Package
Marking
PG-TO220-3-1
080N03L
PG-TO263-3
080N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Pulsed drain current2)
Avalanche current, single pulse3)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) J-STD20 and JESD22
I D,pulse
I AS
E AS
dv /dt
V GS
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
T C=25 °C
T C=25 °C
I D=12 A, R GS=25 W
I D=50 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=175 °C
Rev. 1.04
page 1
Value
50
42
48
34
350
50
50
6
±20
Unit
A
mJ
kV/µs
V
2010-01-19

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