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IRLML2502PBF-1 fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRLML2502PBF-1
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRLML2502PBF-1 fiche technique
VDS
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TA = 25°C)
20
0.045
8.0
4.2
V
Ω
nC
A
IRLML2502PbF-1
HEXFET® Power MOSFET
G1
S2
3D
Micro3(SOT-23)
Features
Industry-standard pinout SOT-23 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRLML2502TRPbF-1
Package Type
Micro3(SOT-23)
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number
IRLML2502TRPbF-1
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambientƒ
Max.
20
4.2
3.4
33
1.25
0.8
0.01
± 12
-55 to + 150
Units
V
A
W
W/°C
V
°C
Typ.
75
Max.
100
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 28, 2014

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