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PDF IRF3575DPbF Data sheet ( Hoja de datos )
| Número de pieza | IRF3575DPbF | |
| Descripción | 60A Exposed Top Integrated Power Block | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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60A Exposed Top Integrated Power Block
IRF3575DPbF
FEATURES
Peak efficiency up to 95% at 1.2V
Integrated pair of control and synchronous
MOSFETs in a single PQFN package
Proprietary package minimizes package parasitic
and simplifies PCB layout
Input voltage (VIN) range of 4.5V to 21V
Output current capability of 60A/phase
Switching frequency up to 1.0MHz
Ultra-low Rg MOSFET technology minimizes
switching losses for optimized high frequency
performance
Synchronous MOSFET with monolithic integrated
Schottky diode reduces dead-time and diode
reverse recovery losses
Enhanced top side cooling through exposed pad
Small 6mm x 6mm x 0.65mm PQFN package
RoHS compliant, Halogen-Free
APPLICATIONS
High current, low profile DC-DC converters
Voltage Regulators for CPUs, GPUs, and DDR
memory arrays
DESCRIPTION
The IRF3575DPbF exposed-top integrated Power Block
is a single-phase synchronous buck converter with a
pair of co-packed control and synchronous MOSFETs.
It is optimized internally for PCB layout, heat transfer
and package inductance. Coupled with the latest
generation of IR MOSFET technology, the
IRF3575DPbF provides higher efficiency at lower output
voltages required by cutting edge CPU, GPU and DDR
memory designs.
Up to 1.0MHz switching frequency enables high
performance
transient
response,
allowing
miniaturization of output inductors, as well as input and
output capacitors while maintaining industry leading
efficiency. Integrates two high performance MOSFETs
in one package while providing superior efficiency and
thermals, the IRF3575DPbF enables smallest size and
lower solution cost.
The IRF3575DPbF uses IR’s latest generation of low
voltage MOSFET technology providing ultra-low(<0.5)
gate resistance (Rg) and gate charge that results in
minimized switching losses. The low RDSon resistance
of the synchronous MOSFET, optimizes conduction
losses and features a monolithic integrated Schottky to
significantly reduce dead-time and diode conduction
and reverse recovery losses.
The IRF3575DPbF is optimized specifically for CPU
core power delivery in 12Vin applications like servers,
narrow VDC notebooks, GPU and DDR memory
designs.
ORDERING INFORMATION
Base Part Number
IRF3575DPBF
Package Type
PQFN 6mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number
IRF3575DTRPBF
1 www.irf.com © 2013 International Rectifier
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October 28, 2013
1 page  
60A Exposed Top Integrated Power Block
IRF3575DPbF
ELECTRICAL SPECIFICATIONS
The electrical characteristics involve the spread of values guaranteed within the recommended operating conditions.
Typical values represent the median values, which are related to 25°C.
ELECTRICAL CHARACTERISTICS
Efficiency
PARAMETER
Power Block per-channel Peak Efficiency
SYMBOL
η
Control MOSFETs (Q1)
Drain-to-Source On-Resistance
Drain-to-Source On-Resistance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temperature Coeffi-
cient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage Current
Gate-to-Source Reverse Leakage Current
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 +Qgd )
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
RDS(ON)_4.5V_25°C
RDS(ON)_10V_25°C
BVDSS
∆BVDSS / ∆TJ
IDSS
IGSS
IGSS
VGS(th)
∆VGS(th)
Qg
Qgs1
Qgs2
Qgd
Qgodr
QSW
Qoss
Rg
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VSD
trr
Qrr
CONDITIONS
MIN
Note 2
Note 3
VGS=4.5V, ID=27A, TJ=25°C
VGS=10V, ID=27A, TJ=25°C
VGS=0V, ID=250uA, TJ=25°C
Reference to 25°C, Note 1
VDS=20V, VGS=0V, TJ=25°C
VGS=16V
VGS=-16V
VDS= VGS, ID=35uA
VDS= VGS, ID=35uA
VDS= 13V, VGS=4.5V, ID=13A, Note 1
VDS= 13V, VGS=4.5V, ID=13A
VDS= 13V, VGS=4.5V, ID=13A
VDS= 13V, VGS=4.5V, ID=13A
VDS= 13V, VGS=4.5V, ID=13A
VDS= 13V, VGS=4.5V, ID=13A
VDS= 16V, VGS=0V
25
1.1
VDD= 13V, VGS=4.5V, ID=14A,
RG=1.8 Ω
VDD= 13V, VGS=4.5V, ID=14A,
RG=1.8 Ω
VDD= 13V, VGS=4.5V, ID=14A,
RG=1.8 Ω
VDD= 13V, VGS=4.5V, ID=14A,
RG=1.8 Ω
VGS= 0V, VDS=13V, f=1.0MHz
VGS= 0V, VDS=13V, f=1.0MHz
VGS= 0V, VDS=13V, f=1.0MHz
VGS=0V, IS=13A, TJ=25°C
TJ=25°C, IF=30A, VDD=13V,
di/dt=200A/us, Note 1
TJ=25°C, IF=30A, VDD=13V,
di/dt=200A/us, Note 1
TYP
95
93
3.20
2.20
0.023
1.6
-5.8
13
3.6
1.3
5.2
2.9
6.5
14
0.5
11
33
14
12
1735
493
137
0.77
19
16
MAX UNIT
%
%
4.10
2.75
1
100
-100
2.1
20
0.88
29
24
mΩ
mΩ
V
V/°C
uA
nA
nA
V
mV/°C
nC
nC
nC
nC
nC
nC
nC
Ω
ns
ns
ns
ns
pF
pF
pF
V
ns
nC
5 www.irf.com © 2013 International Rectifier
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October 28, 2013
5 Page 
10
60A Exposed Top Integrated Power Block
IRF3575DPbF
D = 0.50
1 0.20
0.10
0.05
0.1 0.02
0.01
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Q1)
10
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.001
0.0001
1E-007
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
Fig 26. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Q2)
11 www.irf.com © 2013 International Rectifier
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October 28, 2013
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| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet IRF3575DPbF.PDF ] | |
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