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PDF WFP540 Data sheet ( Hoja de datos )
| Número de pieza | WFP540 | |
| Descripción | Silicon N-Channel MOSFET | |
| Fabricantes | Winsemi | |
| Logotipo |  |
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Features
□ 33A,100V,RDS(on)(Max0.044Ω)@VGS=10V
□ Ultra-low Gate charge(Typical 25nC)
□ Fast Switching Capability
□ 100%Avalanche Tested
□ Isolation Voltage (VISO=4000V AC)
□ Maximum Junction Temperature Range(150℃)
WFP540
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe, DMOS technology. this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast, high efficiency switched mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
VDSS
Drain Source Voltage
Parameter
ID
IDM
VGS
EAS
EAR
dv/dt
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
PD
TJ,Tstg
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
Junction and Storage Temperature
TL Channel Temperature
*Drain current limited by junction temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
100
33*
23*
132
*
±30
435
12.7
6.0
127
0.85
-40~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Min
Value
Typ Max
Units
- - 1.18 ℃/W
- - 62.5 ℃/W
W/T-F002-Rev.A/0 Sep.2012
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
1 page  
TO-220 Package Dimension
WFP540
Unit:mm
Steady, keep you advance
5/7
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet WFP540.PDF ] | |
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