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Winsemi - Silicon N-Channel MOSFET

Numéro de référence WFP50N06
Description Silicon N-Channel MOSFET
Fabricant Winsemi 
Logo Winsemi 





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WFP50N06 fiche technique
Features
RDS(on)(Max 22mΩ)@VGS=10V
Ultra-low Gate Charge(Typical 31nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
WFP50N06
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's trench Layout
-based process .This technology mproves the performances
Compared with standard parts form various sources.All of these
power MOSFETs are designed for applications in switching
regulators , switching convertors, motor and relay drivers ,and
drivers for high power bipolar switching transistors demanding
high speed and low gate drive power.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25)
ID
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Case-to-Sink,Flat, Greased Surface
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note2)
(Note1)
(Note3)
Value
60
50
38
200
± 25
480
13
5.8
130
1.3
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/
Value
Units
Min Typ Max
- - 0.96 /W
- 0.5 - /W
- - 62.5 /W
Rev.A Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.

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