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PDF NRVBB60H100CTT4G Data sheet ( Hoja de datos )
| Número de pieza | NRVBB60H100CTT4G | |
| Descripción | Switch-mode Power Rectifier | |
| Fabricantes | ON Semiconductor | |
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MBR60H100CTG,
MBRB60H100CTT4G,
NRVBB60H100CTT4G
Switch-mode
Power Rectifier
100 V, 60 A
Features and Benefits
• Low Forward Voltage: 0.72 V @ 125°C
• Low Power Loss/High Efficiency
• High Surge Capacity
• 175°C Operating Junction Temperature
• 60 A Total (30 A Per Diode Leg)
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight (Approximately): 1.9 Grams (TO−220)
1.7 Grams (D2PAK−3)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• ESD Rating: Human Body Model = 3B
Machine Model = C
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 6
1
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIER
60 AMPERES, 100 VOLTS
1
2, 4
3
4 MARKING
DIAGRAM
1
2
3
TO−220
CASE 221A
STYLE 6
AYWW
B60H100G
AKA
D2PAK−3
CASE 418B
STYLE 3
AYWW
B60H100G
AKA
A = Assembly Location
Y = Year
WW = Work Week
B60H100 = Device Code
G = Pb−Free Package
AKA = Polarity Designator
ORDERING INFORMATION
Device
Package Shipping†
MBR60H100CTG
TO−220 50 Units/Rail
(Pb−Free)
MBRB60H100CTT4G D2PAK−3
800/
(Pb−Free) Tape & Reel
NRVBB60H100CTT4G D2PAK−3
800/
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MBR60H100CT/D
1 page  
MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
MERCURY
SWITCH
S1
+VDD
IL 10 mH COIL
ID
DUT
VD
IL
t0
BVDUT
ID
VDD
t1 t2 t
Figure 9. Test Circuit
The unclamped inductive switching circuit shown in
Figure 9 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
Figure 10. Current−Voltage Waveforms
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
EQUATION (1):
ǒ ǓWAVAL [
1
2
LI
2
LPK
BVDUT
BVDUTVDD
EQUATION (2):
WAVAL
[
1
2
LI
2
LPK
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NRVBB60H100CTT4G.PDF ] | |
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