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Winsemi - Silicon N-Channel MOSFET

Numéro de référence WFU5N65L
Description Silicon N-Channel MOSFET
Fabricant Winsemi 
Logo Winsemi 





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WFU5N65L fiche technique
WFU5N65L Product Description
Silicon N-Channel MOSFET
Features
4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V
Low Crss (typical 3.62pF )
Fast switching
100% avalanche tested
Improved dv/dt capability
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology.this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast, high efficiency switched mode power
supplies, active power factor correction.
D
G
S
G
D
S TO-251
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM
VGS
EAS
EAR
dv/dt
PD
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
Derating Factor above 25
TJ Junction Temperature
Tstg Storage Temperature
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note2)
(Note1)
(Note3)
Value
650
4.5*
2.5*
16*
±30
256
11
5.5
51
0.39
150
-55~150
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/
Value
Units
Min Typ Max
- - 2.5 /W
- - 83 /W
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEMI MICROELECTRONICS
WT-F111-Rev.A0 Nov 2015
WINSEMI MICROELECTRONICS
1115

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