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PDF WFF7N65L Data sheet ( Hoja de datos )
| Número de pieza | WFF7N65L | |
| Descripción | Silicon N-Channel MOSFET | |
| Fabricantes | Winsemi | |
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WFF7N65L Product Description
Silicon N-Channel MOSFET
Features
� 7A,650V,RDS(on)(Max1.38Ω)@VGS=10V
� Low Crss (typical 15pF )
� Fast Switching Capability
� 100%Avalanche Tested
� Isolation Voltage (VISO=4000V AC)
� Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advancedplanar
stripe,VDMOS technology.this latest technology has beenespecially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics .This devices is specially wellsuited for
half bridge and full bridge resonant topology line a electronic lamp
ballast, high efficiency switched mode power supplies, active power
factor correction.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
D
G
S
(Note1)
(Note2)
(Note1)
(Note1)
(Note3)
Value
650
7
4.6
28
±30
712
12.5
14
4.5
41
0.31
-55~150
Units
V
A
A
A
V
mJ
mJ
mJ
V/ ns
W
W/℃
℃
Value
Units
Min Typ Max
- - 3.2 ℃/W
- - 62.5 ℃/W
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WT-F120-Rev.A0 Dec.2015(B0)
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
1215
1 page  
WFF7N65L Product Description
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
50K Ω
12V 200nF
300nF
VG S
Same type
as DUT
VG S
10V
VD S
Qg s
DUT
3m A
Qg
Qg d
Charge
Fig.12 Gate Test Circuit & Waveform
10V
VD S
VG S
RG
RL
VD D
DUT
VD S 9 0 %
VG S 1 0 %
td(on) tr
to n
td ( o ff)
tf
to ff
Fig.13 Resistive Switching Test Circuit & Waveform
VD S
ID
RG
L
EA S =
1
2
L IA S 2
B VDSS
B V D S S- VD D
B VDSS
IA S
VD D ID( t)
10V
tp
DUT
VD D VD S(t)
tp T i m e
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
5/8
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet WFF7N65L.PDF ] | |
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