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PDF ZXTN25060BZQ Data sheet ( Hoja de datos )

Número de pieza ZXTN25060BZQ
Descripción 60V NPN MEDIUM POWER TRANSISTOR
Fabricantes Diodes 
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Description
This Bipolar Junction Transistor (BJT) is designed to meet the
stringent requirements of automotive applications.
Features
BVCEX > 150V
BVCEO > 60V
BVECO > 6V
IC = 5A Continuous Collector Current
VCE(sat) < 70mV @ 1A
RCE(sat) = 48mΩ for a Low Equivalent On-Resistance
Very Low Saturation Voltages
Excellent hFE Characteristics
6V Reverse Blocking Capability
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
ZXTN25060BZQ
60V NPN MEDIUM POWER TRANSISTOR IN SOT89
Mechanical Data
Case: SOT89
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.055 grams (Approximate)
Applications
Motor Driving (including DC fans)
Solenoid, Relay and Actuator Drivers
DC-DC Modules
Power Switches
MOSFET Gate Drivers
SOT89
C
E
B CC
Top View
E
Equivalent Circuit
Top View
Pin-Out
B
Ordering Information (Notes 4 & 5)
Product
ZXTN25060BZQTA
Compliance
Automotive
Marking
1C7
Reel size (inches)
7
Tape width (mm)
12mm
Quantity per reel
1,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT89
1C7
YWW
1C7= Product Type Marking Code
YWW = Date Code Marking
Y = Last Digit of Year (ex: 5 = 2015)
WW = Week Code (01 ~ 53)
ZXTN25060BZQ
Document number: DS38348 Rev. 1 - 2
1 of 8
www.diodes.com
October 2015
© Diodes Incorporated

1 page




ZXTN25060BZQ pdf
ZXTN25060BZQ
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Forward
Blocking)
Collector-Emitter Breakdown Voltage (Note 12)
Emitter-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage (Reverse
Blocking)
Emitter-Collector Breakdown Voltage (Base Open)
Collector-Base Cutoff Current
Symbol
BVCBO
BVCEX
BVCEO
BVEBO
BVECX
BVECO
ICBO
Min
150
150
60
7
6
6
Typ
190
190
80
8.0
8
7
<1
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
ICEX
IEBO
Collector-Emitter Saturation Voltage (Note 12)
VCE(sat)
Base-Emitter Saturation Voltage (Note 12)
Base-Emitter Turn-On Voltage (Note 12)
DC Current Gain (Note 12)
VBE(sat)
VBE(on)
hFE
100
90
45
Transitional Frequency
fT
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Cobo
td
tr
ts
tf
Note:
12. Measured under pulsed conditions. Pulse width 300µs. Duty cycle ≤ 2%.
<1
55
70
185
240
1,020
960
200
180
90
20
185
11.5
16
15
509
57
Max
50
20
100
50
70
90
230
305
1,100
1,050
300
20
Unit
V
V
V
V
V
V
nA
µA
nA
nA
mV
mV
mV
MHz
pF
ns
ns
ns
ns
Test Condition
IC = 100µA
IC = 100µA, RBE <1kΩ or
-1V < VBE <0.25V
IC = 10mA
IE = 100µA
IE = 100µA, RBC <1kΩ or
<0.25V > VBC >0.25V
IE = 100µA
VCB = 120V
VCB = 120V, TA = +100°C
VCE = 120V, RBE <1kΩ or
-1V < VBE <0.25V
VEB = 5.6V
IC = 1A, IB = 100mA
IC = 1A, IB = 50mA
IC = 4A, IB = 400mA
IC = 5A, IB = 500mA
IC = 5A, IB = 500mA
IC = 5A, VCE = 2V
IC = 10mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 2A, VCE = 50V
IC = 5A, VCE = 5V
IC = 100mA, VCE = 5V
f=100MHz
VCB= 10V, f=1MHz
VCC = 10V,
ICC = 500mA
IB1 = - IB2 = 50mA
ZXTN25060BZQ
Document number: DS38348 Rev. 1 - 2
5 of 8
www.diodes.com
October 2015
© Diodes Incorporated

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