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Número de pieza | DMP2088LCP3 | |
Descripción | P-CHANNEL ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DMP2088LCP3 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! DMP2088LCP3
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
-20V
RDS(ON) Max
88mΩ @ VGS = -8V
105mΩ @ VGS = -4.5V
ID
TA = +25°C
-2.9A
-1.8A
Description
This new generation MOSFET has been designed to minimize the
footprint in handheld and Mobile application. It can be used to replace
many small signals MOSFET with as really small footprint.
Applications
Battery Management
Load Switch
Battery Protection
Handheld and Mobile Application
Features and Benefits
Low Qg & Qgd
Small Footprint
Low Profile 0.30mm Height
Totally Lead-Free & Fully RoHS Compliant (Notes 1& 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X2-DSN1006-3
Terminal Connections: See Diagram Below
Terminals: Finish – Matte Tin Annealed over Copper Pillar e3
X2-DSN1006-3
Top View
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMP2088LCP3-7
Case
X2-DSN1006-3
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
B = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: D = 2016)
M or M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
2015
C
Feb
2
2016
D
Mar
3
2017
E
Apr
4
2018
F
May
5
2019
G
Jun
6
2020
H
Jul
7
2021
I
Aug
8
2022
J
Sep
9
2023
K
Oct
O
2024
L
Nov
N
2025
M
Dec
D
DMP2088LCP3
Document number: DS38475 Rev. 2 - 2
1of 7
www.diodes.com
July 2016
© Diodes Incorporated
1 page DMP2088LCP3
300
Single Pulse
250
RθJA = 217℃/W
RθJA (t) = RθJA * r(t)
TJ-TA = P * RθJA (t)
200
150
100
50
0
1E-05
0.0001
1
D=0.7
D=0.5
D=0.3
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 12. Single Pulse Maximum Power Dissipation
D=0.9
0.1
D=0.1
D=0.05
100
0.01
D=0.02
D=0.01
D=0.005
D=Single Pulse
RθJA (t) = r(t) * RθJA
RθJA = 217℃/W
Duty Cycle, D = t1/t2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
10
100
1000
1000
DMP2088LCP3
Document number: DS38475 Rev. 2 - 2
5of 7
www.diodes.com
July 2016
© Diodes Incorporated
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet DMP2088LCP3.PDF ] |
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DMP2088LCP3 | P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
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