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Número de pieza | DMP2039UFDE4 | |
Descripción | P-CHANNEL ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DMP2039UFDE4 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! DMP2039UFDE4
25V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-25V
RDS(on) max
26mΩ @ VGS = -4.5V
40mΩ @ VGS = -1.8V
ID
TA = 25°C
-7.3
-6.0
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• Load Switching
• Battery Management Application
• Power Management Functions
Features and Benefits
• Low RDS(ON) – ensures on state losses are minimized
• 0.4mm profile – ideal for low profile applications
• PCB footprint of 4mm2
• Low Input Capacitance
• ESD Protected Gate
• Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X2-DFN2020-6
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.006 grams (approximate)
X2-DFN2020-6
Drain
ESD PROTECTED
Bottom View
Top View
Bottom View
Internal Schematic
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 3)
Notes:
Part Number
DMP2039UFDE4-7
Case
X2-DFN2020-6
Packaging
3,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
DMP2039UFDE4
Document number: DS35675 Rev. 3 - 2
PD = Product Type Marking Code
YM = Date Code Marking
PD Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Dot Denotes Pin 1
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
1 of 6
www.diodes.com
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
March 2012
© Diodes Incorporated
1 page DMP2039UFDE4
1
D = 0.7
D = 0.5
D = 0.3
0.1 D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
0.001
0.00001
0.0001
D = 0.9
RθJA(t) = r(t) * RθJA
RθJA = 178°C/W
Duty Cycle, D = t1/ t2
0.001
0.01 0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
10
100
1,000
Package Outline Dimensions
A
E E2
Z(3X)
A3
A1
D
e
D2
L
L1
e b(6X)
X2-DFN2020-6
Dim Min Max Typ
A − 0.40 −
A1 0 0.05 0.03
A3 − − 0.13
b 0.25 0.35 0.30
D 1.95 2.05 2.00
D2 0.85 1.05 0.95
E 1.95 2.05 2.00
E2 1.40 1.60 1.50
e − − 0.65
L 0.25 0.35 0.30
L1 1.35 1.45 1.40
Z − − 0.20
All Dimensions in mm
DMP2039UFDE4
Document number: DS35675 Rev. 3 - 2
5 of 6
www.diodes.com
March 2012
© Diodes Incorporated
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet DMP2039UFDE4.PDF ] |
Número de pieza | Descripción | Fabricantes |
DMP2039UFDE | P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
DMP2039UFDE4 | P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
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