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Numéro de référence | DMN2008LFU | ||
Description | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | ||
Fabricant | Diodes | ||
Logo | |||
1 Page
Product Summary
BVDSS
20V
RDS(ON) Max
5.4mΩ @ VGS = 4.5V
6.2mΩ @ VGS = 4.0V
6.4mΩ @ VGS = 3.7V
7.5mΩ @ VGS = 3.1V
9.6mΩ @ VGS = 2.5V
ID
TA = +25°C
14.5A
13.5A
13.0A
12.0A
10.5A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) , yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
Power Management Functions
Battery Pack
Load Switch
DMN2008LFU
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: U-DFN2030-6 (Type B)
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: – NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
Terminal Connections: See Diagram Below
Weight: 0.012 grams (Approximate)
U-DFN2030-6 (Type B)
D1 D2
G1 G2
ESD PROTECTED
Gate Protection
Diode
S1
Gate Protection
Diode
S2
Bottom View
Top View
Pin-Out
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN2008LFU-7
DMN2008LFU-13
Case
U-DFN2030-6 (Type B)
U-DFN2030-6 (Type B)
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http:// www.diodes.com/products/packages.html.
Marking Information
DMN2008LFU
Document number: DS38625 Rev. 4 - 2
N28
N28 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 for 2016)
WW = Week Code (01 to 53)
1 of 7
www.diodes.com
July 2016
© Diodes Incorporated
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Pages | Pages 7 | ||
Télécharger | [ DMN2008LFU ] |
No | Description détaillée | Fabricant |
DMN2008LFU | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
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