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PDF DMN1054UCB4 Data sheet ( Hoja de datos )
| Número de pieza | DMN1054UCB4 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
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Product Summary (Typ. @ VGS = 4.5V, TA = +25°C)
VDSS
8V
RDS(ON)
35mΩ
Qg
9.6nC
Qgd
0.9nC
ID
4.0A
Description
The DMN1054UCB4 is a Trench MOSFET, engineered to minimize
on-state losses and switch ultra-fast, making it ideal for high-efficiency
power transfer. Using Chip-Scale Package (CSP) to increase power
density by combining low thermal impedance with minimal RDS(ON)
per footprint area.
Applications
DC-DC Converters
Battery Management
Load Switch
X1-WLB0808-4
DMN1054UCB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Trench-CSP Technology with the Lowest on Resistance:
RDS(ON) = 35mΩ to Minimize On-State Losses
Qg = 9.6nC for Ultra-Fast Switching
VGS(TH) = 0.6V Typ. for a Low Turn-On Potential
CSP with Footprint 0.8mm × 0.8mm
Height = 0.375mm for Low Profile
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: X1-WLB0808-4
Terminal Connections: See Diagram Below
Top-View
Pin Configuration
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN1054UCB4-7
Case
X1-WLB0808-4
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
Month
Code
2012
Z
Jan Feb
12
YW = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: D = 2016)
M or M = Month (ex: 9 = September)
2013
A
Mar
3
2014
B
Apr May
45
2015
C
Jun Jul
67
2016
D
Aug
8
Sep
9
2017
E
Oct
O
2018
F
Nov Dec
ND
DMN1054UCB4
Document number: DS37579 Rev. 5 - 2
1 of 7
www.diodes.com
August 2016
© Diodes Incorporated
1 page  
100
RD S( o n )
Limited
10
DC
1 PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
PW = 1ms
0.1 T J(m ax)= 150°C PW = 100µs
T A = 25°C
VGS = 4.5V
Single Pulse
0.01 DUT on 1 * MRP Board
0.1 1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 13 SOA, Safe Operation Area
100
DMN1054UCB4
400
300
Single Pulse
Rthja = 167°C/W
Rthja(t) = Rthja * r(t)
TJ - TA = P * Rthja(t)
200
100
0
0.00001
0.001
0.1
10 1000
t1, PULSE DURATION TIME (sec)
Figure 14 Single Pulse Maximum Power Dissipation
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
0.001
0.00001
0.0001
0.001
0.01 0.1
1
t1, PULSE DURATION TIME (sec)
Figure 15 Transient Thermal Resistance
Rthja(t) = r(t) * Rthja
Rthja = 169°C/W
Duty Cycle, D = t1/ t2
10 100 1000
DMN1054UCB4
Document number: DS37579 Rev. 5 - 2
5 of 7
www.diodes.com
August 2016
© Diodes Incorporated
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet DMN1054UCB4.PDF ] | |
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