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PDF DMN10H170SVTQ Data sheet ( Hoja de datos )

Número de pieza DMN10H170SVTQ
Descripción 100V N-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
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Product Summary
BVDSS
100V
RDS(ON) Max
160mΩ @ VGS = 10V
200mΩ @ VGS = 4.5V
ID Max
TA = +25°C
2.6A
2.3A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Applications
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
DMN10H170SVTQ
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.015 grams (Approximate)
Top View
TSOT26
D1
D2
G3
6D
5D
4S
Top View
Pin-Out
D
G
S
Equivalent Circuit
Ordering Information (Note 5)
Notes:
Part Number
DMN10H170SVTQ-7
DMN10H170SVTQ-13
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMN10H170SVTQ
Document number: DS38276 Rev. 2 - 2
1 of 8
www.diodes.com
December 2015
© Diodes Incorporated

1 page




DMN10H170SVTQ pdf
DMN10H170SVTQ
2.4
2.2 ID = 1mA
2
1.8
1.6 ID = 250μA
1.4
1.2
1
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 7. Gate Threshold Variation vs. Junction
Temperature
10000
f=1MHz
1000
Ciss
100
Coss
10
0
Crss
10 20 30 40 50 60 70 80 90 100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Typical Junction Capacitance
100
RD S( o n )
Limited
10
10
VGS = 0V
8
6
4
TJ = 125oC
2
TJ = 150oC
0
TJ = 85oC
TJ = 25oC
TJ = -55oC
0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8. Diode Forward Voltage vs. Current
10
9
8 VDS = 80V
ID = 12.8A
7
6
5
4
3
2
1
0
0 2 4 6 8 10
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
1 DC
PW = 10s
PW = 1s
0.1
PW = 100ms
TJ(m ax) = 150°C
PW = 10ms
0.01 TA = 25°C
PW = 1ms
VGS = 10V
Single Pulse
DUT on 1 * MRP Board
PW = 100µs
0.001
0.1 1 10 100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
DMN10H170SVTQ
5 of 8
Document number: DS38276 Rev. 2 - 2
www.diodes.com
December 2015
© Diodes Incorporated

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