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PDF DMHC10H170SFJ Data sheet ( Hoja de datos )
| Número de pieza | DMHC10H170SFJ | |
| Descripción | 100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE | |
| Fabricantes | Diodes | |
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DMHC10H170SFJ
100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
Features
Device BVDSS
Q1 & Q4 100V
Q2 & Q3 -100V
RDS(ON) MAX
160mΩ @ VGS = 10V
200mΩ @ VGS = 4.5V
250mΩ @ VGS = -10V
300mΩ @ VGS = -4.5V
ID
TA = +25°C
2.9A
2.6A
-2.3A
-2.1A
Low On-Resistance
Low Input Capacitance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Applications
Case: V-DFN5045-12
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.056 grams (Approximate)
High-Efficiency Bridge Rectifiers
V-DFN5045-12
Top View
Pin 1
G1 S1 S1 G2 S2 S2
D1/D2
D3/D4
D1/D2
D3/D4
G4 S4 S4 G3 S3 S3
Bottom View
S3 7 Q3 (Pch)
Pin
OSu3t 8
Pin
OGu3t 9
Pin
OSu4t 10 Q4 (Nch)
Pin
OSu4t 11
Pin
OGu4t 12
Pin
Out
D3,D4 to backside
Q2 (Pch) 6 S2
Pin
5 OSu2t
Pin
4 OGu2t
Pin
Q1 (Nch) 3 OSu1t
Pin
2 OSu1t
Pin
1 OGu1t
Pin
Out
D1,D2 to backside
Internal Schematic
Ordering Information (Note 4)
Part Number
DMHC10H170SFJ-13
Case
V-DFN5045-12
Tape Width
12mm
Packaging
3,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
C170SJ
YY WW
=Manufacturer’s Marking
C170SJ = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
DMHC10H170SFJ
Document number: DS37571 Rev. 3 - 2
1 of 9
www.diodes.com
January 2016
© Diodes Incorporated
1 page  
DMHC10H170SFJ
0.5
0.4
0.3
VGS=4.5V, ID=5A
0.2
VGS=10V, ID=5A
0.1
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
3
2.5
ID=1mA
2
1.5 ID=250mA
1
0.5
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs.
JunctionTemperature
15
VGS=0V
12
TA=150℃
9 TA=125℃
6 TA=85℃
TA=25℃
3
TA=-55℃
0
0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10000
1000
f=1MHz
Ciss
100 Coss
10
0
Crss
5 10 15 20 25 30 35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
40
10
8
6
4
VDS=80V, ID=12.8A
2
0
0 3 6 9 12
Qg, TOTAL GATE CHARGE (nC)
Figure 11. Gate Charge
DMHC10H170SFJ
Document number: DS37571 Rev. 3 - 2
100
RDS(ON) Limited
10
PW=100ms
PW=1ms
1
DC
0.1 PW=10s
0.01
TJ(Max)=+150℃
TC=+25℃
Single Pulse
DUT on
PW=1s
PW=100ms
PW=10ms
1*MRP board
15 0.001 VGS=10V
0.1 1 10 100 1000
VFDigSu,rDeR1A2.INS-OSAO,USRaCfeEOVpOerLaTtiAoGn EAr(eVa)
5 of 9
www.diodes.com
January 2016
© Diodes Incorporated
5 Page | ||
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