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PDF DMS3016SSS Data sheet ( Hoja de datos )
| Número de pieza | DMS3016SSS | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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DMS3016SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Features
• DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
• Low RDS(ON) - minimizes conduction losses
• Low VSD - reducing the losses due to body diode conduction
• Low Qrr - lower Qrr of the integrated Schottky reduces body
diode switching losses
• Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
• Avalanche rugged – IAR and EAR rated
• Lead Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Marking Information: See Page 5
• Ordering Information: See Page 5
• Weight: 0.072 grams (approximate)
Top View
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3) VGS = 4.5V
Steady
State
Pulsed Drain Current (Note 4)
Avalanche Current (Note 4) (Note 5)
Repetitive Avalanche Energy (Note 4) (Note 5) L = 0.3mH
SD
SD
SD
GD
Top View
Internal Schematic
TA = 25°C
TA = 85°C
Symbol
VDSS
VGSS
ID
IDM
IAR
EAR
Value
30
±12
9.8
6.3
90
13
25.4
Unit
V
V
A
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.54
81
-55 to +150
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on minimum recommended layout. The value in any given application depends on the user’s specific board design.
4. Repetitive rating, pulse width limited by junction temperature.
5. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C
Unit
W
°C/W
°C
DMS3016SSS
Document number: DS32266 Rev. 3 - 2
1 of 6
www.diodes.com
September 2010
© Diodes Incorporated
1 page  
DMS3016SSS
Ordering Information (Note 8)
Notes:
Part Number
DMS3016SSS-13
Case
SO-8
8. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
8
S3016SS
YY WW
5
14
Logo
Part no.
Xth week: 01 ~ 53
Year: “09” = 2009
Year: “10” = 2010
Package Outline Dimensions
Packaging
2500 / Tape & Reel
e
D
b
E1 E
A1
L
Detail ‘A’
Gauge Plane
Seating Plane
A2 A A3
h
45°
7°~9°
Detail ‘A’
SO-8
Dim Min Max
A - 1.75
A1 0.10 0.20
A2 1.30 1.50
A3 0.15 0.25
b 0.3 0.5
D 4.85 4.95
E 5.90 6.10
E1 3.85 3.95
e 1.27 Typ
h - 0.35
L 0.62 0.82
θ 0° 8°
All Dimensions in mm
Suggested Pad Layout
X
C2
Y
C1
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
DMS3016SSS
Document number: DS32266 Rev. 3 - 2
5 of 6
www.diodes.com
September 2010
© Diodes Incorporated
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet DMS3016SSS.PDF ] | |
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