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DMG4932LSD fiches techniques PDF

Diodes - ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Numéro de référence DMG4932LSD
Description ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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DMG4932LSD fiche technique
DMG4932LSD
ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
High Density UMOS with Schottky Barrier Diode
Low Leakage Current at High Temp.
High Conversion Efficiency
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Utilizes Diodes’ Monolithic DIOFET Technology to Increase
Conversion Efficiency
100% UIS and Rg Tested
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Marking Information: See Page 8
Ordering Information: See Page 8
Weight: 0.072 grams (approximate)
Diodes Schottky Integrated MOSFET
D2
D2
G1
S1
G2
S2/D1
S2/D1
S2/D1
Top View
Top View
Internal Schematic
Q1
D1
Q2
D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
Maximum Ratings – Q1 @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
Pulsed Drain Current (Note 4)
Avalanche Current (Notes 4 & 5)
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.3mH
TA = 25°C
TA = 85°C
Symbol
VDSS
VGSS
ID
IDM
IAR
EAR
Value
30
±12
9.5
7.2
40
13
25.4
Unit
V
V
A
A
A
mJ
Maximum Ratings – Q2 @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
Pulsed Drain Current (Note 4)
Avalanche Current (Notes 4 & 5)
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.3mH
TA = 25°C
TA = 85°C
Symbol
VDSS
VGSS
ID
IDM
IAR
EAR
Value
30
±25
9.5
7.5
40
13
25.4
Unit
V
V
A
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.19
107
-55 to +150
Unit
W
°C/W
°C
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout. The value in any given application depends on the user’s specific board design.
4. Repetitive rating, pulse width limited by junction temperature.
5. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C
DMG4932LSD
Document number: DS32119 Rev. 4 - 2
1 of 9
www.diodes.com
August 2010
© Diodes Incorporated

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