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S34MS01G2 fiches techniques PDF

Cypress Semiconductor - 1 Gbit/2 Gbit/4 Gbit SLC NAND Flash

Numéro de référence S34MS01G2
Description 1 Gbit/2 Gbit/4 Gbit SLC NAND Flash
Fabricant Cypress Semiconductor 
Logo Cypress Semiconductor 





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S34MS01G2 fiche technique
S34MS01G2
S34MS02G2
S34MS04G2
1 Gbit/2 Gbit/4 Gbit
SLC NAND Flash for Embedded
Distinctive Characteristics
Density
– 1 Gb / 2 Gb / 4 Gb
Architecture
– Input / Output Bus Width: 8 bits / 16 bits
– Page size:
– x8
1 Gb: (2048 + 64) bytes; 64-byte spare area
2 Gb / 4 Gb: (2048 + 128) bytes; 128-byte spare area
– x16
1 Gb: (1024 + 32) words; 32-word spare area
2 Gb / 4Gb: (1024 + 64) words; 64-word spare area
– Block size: 64 Pages
– x8
1 Gb: 128 KB + 4 KB
2 Gb / 4 Gb: 128 KB + 8 KB
– x16
1 Gb: (64k + 2k) words
2 Gb / 4 Gb: (64k + 4k) words
– Plane size:
– x8
1 Gb: 1024 Blocks per Plane or (128 MB + 4 MB)
2 Gb: 1024 Blocks per Plane or (128 MB + 8 MB)
4 Gb: 2048 Blocks per Plane or (256 MB + 16 MB)
– x16
1 Gb: 1024 Blocks per Plane or (64M + 2M) words
2 Gb: 1024 blocks per plane or (64M + 4M) words
4 Gb: 2048 blocks per plane or (128M + 8M) words
– Device size:
– 1 Gb: 1 plane per device or 128 MB
– 2 Gb: 2 planes per device or 256 MB
– 4 Gb: 2 planes per device or 512 MB
NAND flash interface
– Open NAND Flash Interface (ONFI) 1.0 compliant
– Address, Data, and Commands multiplexed
Supply voltage
– 1.8 V device: VCC = 1.7 V ~ 1.95 V
Security
– One Time Programmable (OTP) area
– Serial number (unique ID) (Contact factory for support)
– Hardware program/erase disabled during power transition
Additional features
– 2 Gb and 4 Gb parts support Multiplane Program and
Erase commands
– Supports Copy Back Program
– 2 Gb and 4 Gb parts support Multiplane Copy Back
Program
– Supports Read Cache
Electronic signature
– Manufacturer ID: 01h
Operating temperature
– Industrial: 40 °C to 85 °C
– Industrial Plus: 40 °C to 105 °C
Performance
Page Read / Program
– Random access: 25 µs (Max) (S34MS01G2)
– Random access: 30 µs (Max) (S34MS02G2, S34ML04G2)
– Sequential access: 45 ns (Min)
– Program time / Multiplane Program time: 300 µs (Typ)
Block Erase (S34MS01G2)
– Block Erase time: 3.0 ms (Typ)
Block Erase / Multiplane Erase (S34MS02G2, S34MS04G2)
– Block Erase time: 3.5 ms (Typ)
Reliability
– 100,000 Program / Erase cycles (Typ)
(with 4-bit ECC per 528 bytes (x8) or 264 words (x16))
– 10-year Data retention (Typ)
– For one plane structure (1-Gb density)
– Block zero is valid and will be valid for at least 1,000
program-erase cycles with ECC
– For two plane structures (2-Gb and 4-Gb densities)
– Blocks zero and one are valid and will be valid for at
least 1,000 program-erase cycles with ECC
Package options
– Pb-free and Low Halogen
– 48-Pin TSOP 12 20 1.2 mm
– 63-Ball BGA 9 11 1 mm
– 67-Ball BGA 8 6.5 1 mm (S34MS01G2, S34MS02G2)
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 002-03238 Rev. *D
• San Jose, CA 95134-1709 • 408-943-2600
Revised October 14, 2016

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