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FQU4N60 fiches techniques PDF

Oucan Semi - 600V 4A N-Channel MOSFET

Numéro de référence FQU4N60
Description 600V 4A N-Channel MOSFET
Fabricant Oucan Semi 
Logo Oucan Semi 





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FQU4N60 fiche technique
FQD4N60/FQI4N60/FQU4N60
600V,4A N-Channel MOSFET
General Description
Product Summary
The FQD4N60 & FQI4N60 & FQU4N60 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested!
100% Rg Tested!
700V@150
4A
< 2.3
TO252
DPAK
Top View
Bottom View
DD
Top View
TO251A
IPAK
Bottom View
TO251
Top View
Bottom View
D
S
G
G
S
S
D
G
G
D
S
S
D
G
AOD4N60
AOI4N60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
CurrentB
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy H
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
AOU4N60
Maximum
600
±30
4
2.6
14
2.8
118
235
50
5
104
0.83
-50 to 150
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
RθCS
RθJC
Typical
43
-
1
Maximum
55
0.5
1.2
G
SD G
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
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