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Inchange Semiconductor - Silicon PNP Darlington Power Transistor

Numéro de référence BDX88
Description Silicon PNP Darlington Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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BDX88 fiche technique
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDX88/A/B/C
DESCRIPTION
·High DC Current Gain-
: hFE= 750(Min)@ IC= -6A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BDX88; -60V(Min)- BDX88A
-80V(Min)- BDX88B; -100V(Min)- BDX88C
·Complement to Type BDX87/A/B/C
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
BDX88
-45
UNIT
VCBO
Collector-Base Voltage
BDX88A
BDX88B
-60
-80
V
BDX88C -100
BDX88
-45
VCEO
BDX88A
Collector-Emitter Voltage
BDX88B
-60
-80
V
BDX88C -100
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-12 A
ICM Collector Current-Peak
-18 A
IB Base Current
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
-200
120
200
mA
W
Tstg Storage Temperature Range
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.45 /W
isc websitewww.iscsemi.cn
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