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PDF 50G60SW Data sheet ( Hoja de datos )
| Número de pieza | 50G60SW | |
| Descripción | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP50G60SW
RoHS-compliant Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
Features
▼ High Speed Switching
▼ Low Saturation Voltage
VCE(sat),Typ.=2.6V@IC=33A
▼ Built-in Fast Recovery Diode
G
C
E
C VCES
IC
TO-3P
G
Absolute Maximum Ratings
Symbol
Parameter
VCES
VGE
IC@TC=25oC
IC@TC=100oC
ICM
IF@TC=25oC
IF@TC=100oC
PD@TC=25oC
TSTG
TJ
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Lead Temp. for Soldering Purposes
, 1/8" from case for 5 seconds .
Rating
600
+30
75
45
150
40
15
300
-55 to 150
150
300
600V
45A
C
E
Units
V
V
A
A
A
A
A
W
oC
oC
oC
Notes:
1.Repetitive rating : Pulse width limited by max. junction temperature .
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-Case
Rthj-c(Diode) Thermal Resistance Junction-Case
Rthj-a
Thermal Resistance Junction-Ambient
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
VCES
IGES
ICES
VCE(sat)
Collect-to-Emitter Breakdown Voltage
Gate-to-Emitter Leakage Current
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
VGE=0V, IC=500uA
VGE=+30V, VCE=0V
VCE=600V, VGE=0V
VGE=15V, IC=33A
VGE=15V, IC=50A
VGE(th)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Switching Loss
VCE=VGE, IC=250uA
IC=33A
VCE=400V
VGE=15V
VCE=390V,
Ic=33A,
VGE=15V,
RG=5Ω,
Inductive Load
Eoff Turn-Off Switching Loss
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
VGE=0V
VCE=30V
f=1.0MHz
VF FRD Forward Voltage
trr FRD Reverse Recovery Time
Qrr FRD Reverse Recovery Charge
IF=15A
IF=15A
di/dt = 200 A/μs
Value
0.42
1.5
40
Units
oC/W
oC/W
oC/W
Min. Typ. Max. Units
600 - - V
- - +100 nA
- - 500 uA
- 2.6 3
V
- 3.1 3.5 V
2 - 6V
- 55 100 nC
- 12 - nC
- 27 - nC
- 27 - ns
- 22 - ns
- 110 -
ns
- 100 260 ns
- 0.7 - mJ
- 1.2 - mJ
- 1250 2000 pF
- 235 -
pF
- 7 - pF
- 1.3 1.7 V
- 65 - ns
- 230 -
nC
Data and specifications subject to change without notice
1
201009033
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 50G60SW.PDF ] | |
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