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Analog Devices - GaAs PHEMT MMIC LOW NOISE AMPLIFIER

Numéro de référence HMC594LC3B
Description GaAs PHEMT MMIC LOW NOISE AMPLIFIER
Fabricant Analog Devices 
Logo Analog Devices 





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HMC594LC3B fiche technique
v03.0514
Typical Applications
The HMC594LC3B is ideal for:
• Fixed Microwave
• Point-to-Multi-Point Radios
• Test & Measurement Equipment
• Radar & Sensors
• Military & Space
Functional Diagram
HMC594LC3B
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2 - 4 GHz
Features
Gain Flatness: ±0.2 dB
Noise Figure: 3 dB
Gain: 10 dB
Output IP3: +36 dBm
DC Supply: +5V @ 95mA / +6V @ 100 mA
50 Ohm Matched Input/Output
RoHS Compliant 3x3 mm SMT package
General Description
The HMC594LC3B is a GaAs pHEMT MMIC Low
Noise Amplifier (LNA) which operates from 2 to 4
GHz. The HMC594LC3B features extremely flat
performance characteristics including 10 dB of small
signal gain, 3 dB of noise figure and output IP3 of
+36 dBm across the operating band. This high linearity
LNA is ideal for test & measurement equipment
and military assemblies due to its compact size,
consistent output power and DC blocked RF I/O’s.
The HMC594LC3B is also available in chip form as
the HMC594.
Electrical Specifications, TA = +25° C, Vdd = +5V, Idd = 95 mA, Vdd = +6V, Idd = 100mA*
Parameter
Min. Typ.
Frequency Range
2-4
Gain
7 10
Gain Variation Over Temperature
0.015
Noise Figure
3
Input Return Loss
15
Output Return Loss
17
Output Power for 1 dB
Compression (P1dB)
18 21
Saturated Output Power (Psat)
22
Output Third Order Intercept (IP3)
36
Supply Current (Idd)
100
*Adjust Vgg between -1.5V to -0.5V to achieve Idd = 100mA typical for 6V or Idd = 95mA typical for 5V.
Max.
4
130
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
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