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PDF HMC1110 Data sheet ( Hoja de datos )
| Número de pieza | HMC1110 | |
| Descripción | GaAs MMIC X6 ACTIVE FREQUENCY MULTIPLIER | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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Typical Applications
The HMC1110 is ideal for:
• Point-to-Point & VSAT Radios
• Test Instrumentation
• Military & Space
• Sensors
Functional Diagram
HMC1110
v00.0615
GaAs MMIC X6 ACTIVE FREQUENCY
MULTIPLIER, 71 - 86 GHz
Features
High Output Power: +13 dBm
Low Input Power Drive: 0 to +6 dBm
5Fo Harmonic Isolation: +25 dBc
7Fo Harmonic Isolation: +40 dBc
Die Size: 2.44 x 1.35 x 0.1 mm
General Description
The HMC1110 is a x6 active broadband frequency
multiplier chip utilizing GaAs pHEMT technology.
When driven by a +4 dBm signal, the multiplier
provides +13 dBm typical output power from 71 to
86 GHz. The 5Fo and 7Fo harmonic isolations with
respect to the output signal level are +25 dBc and +40
dBc respectively. The HMC1110 is ideal for use in LO
multiplier chains for Pt-to-Pt & VSAT Radios yielding
reduced parts count by integrating input and output
amplifiers vs. traditional approach which uses discrete
components. All data is taken with the chip connected
via two 0.025mm (1 mil) wire bonds of minimal length
0.31 mm (12 mils).
Electrical
VD_ AMP1
=SpVDec_iAfiMcaPt2io=n4sV,,TVAD=_+M2U5L°TC=,
1.5V,
4
dBm
Drive
Level
[1]
[2]
Parameter
Min. Typ.
Frequency Range, Input
11.83 - 14.33
Frequency Range, Output
71 - 86
Input Power Drive
0-6
Output Power
10 13
5Fo Harmonic Isolation (with respect to the output signal level)
25
7Fo Harmonic Isolation (with respect to the output signal level)
40
Input Return Loss
15
Output Return Loss
12
Supply Current (VD_AMP1 + VD_AMP2) [1]
175
Supply Current (VD_MULT) [2]
80
Max.
Units
GHz
GHz
dBm
dBm
dBc
dBc
dB
dB
mA
mA
[1] Adjust VG_AMP between -2 to 0V to achieve 175 mA total on VD_AMP1 and VD_AMP2.
[2] Adjust VG_X2, VG_X3 between -2 to 0V to achieve 1 - 2 mA on VD_MULT.
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1 page  
HMC1110
v00.0615
GaAs MMIC X6 ACTIVE FREQUENCY
MULTIPLIER, 71 - 86 GHz
Absolute Maximum Ratings
Amplifier Drain Bias Voltage
(VD_AMP)
+4.5 V
Multiplier Drain Bias Voltage
(VD_MULT)
+3V
RF Input Power
+10 dBm
Junction Temperature
146 °C
Channel Temperature
175 °C
Continuous Pdiss (T=85 °C)
(derate=17.21 mW/ °C above 85°C)
1.55 W
Thermal Resistance (RTH)
(junction to die bottom)
Operating Temperature
58.1 °C/W
-55 °C to +85 °C
Storage Temperature
-65 °C to 150 °C
ESD Sensitivity (HBM)
Class 0, passed 150V
Outline Drawing
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information [1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS 0.0051” [3.303] SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
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4
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HMC1110.PDF ] | |
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