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Número de pieza | HMC194AMS8 | |
Descripción | GaAs MMIC SPDT SWITCH | |
Fabricantes | Analog Devices | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HMC194AMS8 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! HMC194AMS8 / 194AMS8E
v00.0812
GaAs MMIC SPDT SWITCH
DC - 3 GHz
Typical Applications
The HMC194AMS8 /HMC194AMS8E is ideal for:
• Cellular/PCS Base Stations
• Portable Wireless
• MMDS & WirelessLAN
Features
Ultra Small Package: MSOP8
High Isolation: 50 dB
Positive Control: 0/+3V to 0/+7V
Functional Diagram
General Description
The HMC194AMS8 & HMC194AMS8E are low-cost
SPDT switches in 8-lead MSOP packages for use in
applications which require high isolation between two
RF paths. The devices can control signals from DC to
3 GHz and have been optimized to provide extremely
high isolation with minimal insertion loss in medium
and low power applications. On chip circuitry allows
positive voltage control operation at very low DC cur-
rents with control inputs compatible with CMOS and
most TTL logic families. RF1 and RF2 are reflective
opens when “OFF”.
Electrical Specifications, TA = +25° C, Vctl = 0/+5 Vdc, 50 Ohm System
Insertion Loss
Parameter
Isolation
Return Loss
Input Power for 1 dB Compression
0/+5V Control
Input Third Order Intercept
(Two-tone Input Power = +7 dBm Each Tone)
0/+5V Control
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON , tOFF (50% CTL to 10/90% RF)
Frequency
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
0.5 - 3.0 GHz
0.5 - 3.0 GHz
DC - 3.0 GHz
Min.
50
42
31
24
24
49
Typ.
0.5
0.5
0.5
55
45
38
30
26
24
28
53
3
20
Max.
0.9
1.0
1.1
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
ns
ns
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1 page v00.0812
HMC194AMS8 / 194AMS8E
GaAs MMIC SPDT SWITCH
DC - 3 GHz
Typical Application Circuit
Notes:
1. Set logic gate and switch Vdd = +3V to +5V and use HCT series
logic to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS logic (HC)
with Vdd of 3 to 7 Volts applied to the CMOS logic gates.
3. DC Blocking capacitors are required for each RF port as shown.
Capacitor value determines lowest frequency of operation.
4. Highest RF signal power capability is achieved with Control set to 0/+7V.
Evaluation Circuit Board
List of Materials for
Evaluation PCB 105143 [1]
Item
Description
J1 - J3
PC Mount SMA RF Connector
J4 - J6
DC Pin
C1 - C3
100 pF capacitor, 0402 Pkg.
R1, R2
100 Ω resistor, 0402 Pkg.
U1
PCB [2]
HMC194AMS8 / 194AMS8E
SPDT Switch
107821 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
The circuit board used in the final application
should be generated with proper RF circuit design
techniques. Signal lines at the RF port should
have 50 Ohm impedance and the package ground
leads should be connected directly to the ground
plane similar to that shown above. The evalua-
tion circuit board shown above is available from
Hittite Microwave Corporation upon request.
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4
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet HMC194AMS8.PDF ] |
Número de pieza | Descripción | Fabricantes |
HMC194AMS8 | GaAs MMIC SPDT SWITCH | Analog Devices |
HMC194AMS8E | GaAs MMIC SPDT SWITCH | Analog Devices |
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