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Analog Devices - SPDT NON-REFLECTIVE SWITCH

Numéro de référence HMC435AMS8G
Description SPDT NON-REFLECTIVE SWITCH
Fabricant Analog Devices 
Logo Analog Devices 





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HMC435AMS8G fiche technique
HMC435AMS8G / 435AMS8GE
v00.0213
SPDT NON-REFLECTIVE
SWITCH, DC - 4 GHz
Typical Applications
The HMC435AMS8G(E) is ideal for:
• Basestations & Repeaters
• Cellular/3G and WiMAX/4G
• Infrastructure and Access Points
• CATV/CMTS
• Test Instrumentation
Features
High Isolation: 62 dB @ 1 GHz
52 dB @ 2 GHz
Single Positive Control: 0/+5V
Input IP3: 54 dBm
Non-Reflective Design
Ultra Small MSOP-86 Package: 14.8 mm2
Functional Diagram
General Description
The HMC435AMS8G(E) is a non-reflective DC to
4 GHz GaAs MESFET SPDT switch in a low cost 8
lead MSOP8G surface mount package with exposed
ground paddle. The switch is ideal for cellular/3G and
WiMAX/4G applications yielding up to 60 dB isolation,
low 0.8 dB insertion loss and +50 dBm input IP3. Power
handling is excellent up through the 3.8 GHz WiMAX
band with the switch offering a P1dB compression of
+30 dBm. On-chip circuitry allows positive voltage
control of 0/+5 Volts at very low DC currents.
Electrical Specifications, TA = +25° C, Vctl = 0/+5 Vdc, 50 Ohm System
Insertion Loss
Parameter
Frequency
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
Min.
Typ.
0.8
1.0
1.2
Isolation (RFC to RF1/RF2)
Return Loss (On State)
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
56 62
46 52
43 48
37 42
30 40
15 23
13 17
11 14
Return Loss (Off State)
0.5 - 4.0 GHz
16 21
Input Power for 1 dB Compression
0.5 - 4.0 GHz
27 30
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone)
Switching Speed
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
0.5 - 1.0 GHz
0.5 - 2.5 GHz
0.5 - 4.0 GHz
DC - 4.0 GHz
48 54
45 53
41 51
40
60
Max.
1.0
1.5
1.8
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
ns
ns
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