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PDF HMC649ALP6E Data sheet ( Hoja de datos )

Número de pieza HMC649ALP6E
Descripción GaAs MMIC 6-BIT DIGITAL PHASE SHIFTER
Fabricantes Analog Devices 
Logotipo Analog Devices Logotipo



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No Preview Available ! HMC649ALP6E Hoja de datos, Descripción, Manual

Typical Applications
The HMC649ALP6E is ideal for:
• EW Receivers
• Weather & Military Radar
• Satellite Communications
• Beamforming Modules
• Phase Cancellation
Functional Diagram
HMC649ALP6E
v00.0415
GaAs MMIC 6-BIT DIGITAL
PHASE SHIFTER, 3 - 6 GHz
Features
Low RMS Phase Error: 4°
Low Insertion Loss: 8 dB
High Linearity: +40 dBm
Positive Control Logic
360° Coverage, LSB = 5.625°
28 Lead QFN Leadless SMT Package: 36mm2
General Description
The HMC649ALP6E is a 6-bit digital phase shifter
which is rated from 3 to 6 GHz, providing 360 degrees
of phase coverage, with a LSB of 5.625 degrees. The
HMC649ALP6E features very low RMS phase error of
4 degrees and extremely low insertion loss variation of
±0.5 dB across all phase states. This high accuracy
phase shifter is controlled with positive control logic of
0/+5V The HMC649ALP6E is housed in a compact
6x6 mm plastic leadless SMT package and is internally
matched to 50 Ohms with no external components.
Electrical Specifications
TA = +25° C, Vss= -5V, Vdd= +5V , control Voltage = 0/ +5V, 50 Ohm System
Parameter
Min. Typ. Max.
Frequency Range
36
Insertion Loss*
8 10.5
Input Return Loss*
13
Output Return Loss*
10
Phase Error*
3.0 -5.5 GHz
5.5 -6.0 GHz
±5 +15 / -25
-10 +15 / -32
RMS Phase Error
4
Insertion Loss Variation*
±0.5
Input Power for 1 dB Compression
31
Input Third Order Intercept
40
Control Voltage Current
35 250
Units
GHz
dB
dB
dB
deg
deg
dB
dBm
dBm
µA
Bias Control Current
5 15 mA
*Note: Major States Shown
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HMC649ALP6E pdf
HMC649ALP6E
v00.0415
GaAs MMIC 6-BIT DIGITAL
PHASE SHIFTER, 3 - 6 GHz
Phase Error vs. State
15
10 3, 4, 5 GHz
5
0
-5
-10
-15 6 GHz
-20
-25
0
45 90 135 180 225 270 315 360
STATE (degrees)
Bias Voltage & Current
Vdd Idd
5.0 5.4mA
Vss Iss
-5.0 5.4mA
Control Voltage
State
Low (0)
High (1)
Bias Condition
0 to 0.2 Vdc
Vdd ±0.2 Vdc @ 35 µA Typ.
Absolute Maximum Ratings
Input Power (RFIN)
Bias Voltage Range (Vdd)
Bias Voltage Range (Vss)
Channel Temperature (Tc)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
32 dBm (T= +85 °C)
-0.2 to +12V
+0.2 to -12V
150 °C
200 °C/W
-65 to +150 °C
-40 to +85 °C
Class1A (Passed 250V)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Truth Table
Control Voltage Input
Phase Shift (Degrees)
Bit 1
Bit 2
Bit 3
Bit 4
Bit 5
Bit 6
RFIN - RFOUT
0 00 0
0
0
Reference*
1 00 0
0
0
5.625
0 10 0
0
0
11.25
0 01 0
0
0
22.5
0 00 1
0
0
45.0
0 00 0
1
0
90.0
0 00 0
0
1
180.0
1 11 1
1
1
354.375
Any combination of the above states will provide a phase shift approximately equal to the sum of the bits selected.
*Reference corresponds to monotonic setting
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