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Numéro de référence | HMC7587 | ||
Description | 81 GHz to 86 GHz E-Band I/Q Downconverter | ||
Fabricant | Analog Devices | ||
Logo | |||
1 Page
Data Sheet
FEATURES
Conversion gain: 10 dB typical
Image rejection: 30 dBc typical
Noise figure: 6 dB typical
Input power for 1 dB compression (P1dB): −10 dBm typical
Input third-order intercept (IP3): −2 dBm typical
Input second-order intercept (IP2): 25 dBm typical
6× LO leakage at RFIN: −40 dBm typical
Radio frequency (RF) return loss: 10 dB typical
Local oscillator (LO) return loss: 20 dB typical
Die size: 3.599 mm × 2.199 mm × 0.05 mm
APPLICATIONS
E-band communication systems
High capacity wireless backhauls
Test and measurement
81 GHz to 86 GHz
E-Band I/Q Downconverter
HMC7587
GENERAL DESCRIPTION
The HMC7587 is an integrated, E-band gallium arsenide (GaAs),
monolithic microwave integrated circuit (MMIC), in-phase/
quadrature (I/Q) downconverter chip that operates from 81 GHz
to 86 GHz. The HMC7587 provides a small signal conversion
gain of 10 dB with 30 dBc of image rejection across the frequency
band. The device uses a low noise amplifier followed by an image
rejection mixer that is driven by a 6× multiplier.
The image rejection mixer eliminates the need for a filter following
the low noise amplifier. Differential I and Q mixer outputs are
provided for direct conversion applications. Alternatively, the
outputs can be combined using an external 90° hybrid and two
external 180° hybrids to allow for single-sideband applications. All
data includes the effect of a 3 mil wide ribbon wedge bond on the
RF port, and a 1 mil gold wire wedge bond on the intermediate
frequency (IF) ports.
IFIP 5
IFIN 4
FUNCTIONAL BLOCK DIAGRAM
6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21
×6
IFQN 3
IFQP 2
HMC7587
1
RFIN
22
23
24
40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
Figure 1.
Rev. A
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Pages | Pages 30 | ||
Télécharger | [ HMC7587 ] |
No | Description détaillée | Fabricant |
HMC7586 | E-Band I/Q Downconverter | Analog Devices |
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