DataSheetWiki


HMC433E fiches techniques PDF

Analog Devices - SMT GaAs HBT MMIC

Numéro de référence HMC433E
Description SMT GaAs HBT MMIC
Fabricant Analog Devices 
Logo Analog Devices 





1 Page

No Preview Available !





HMC433E fiche technique
v04.0410
Typical Applications
4 Prescaler for DC to C Band PLL Applications:
• UNII, Point-to-Point & VSAT Radios
• 802.11a & HiperLAN WLAN
• Fiber Optic
• Cellular / 3G Infrastructure
Functional Diagram
HMC433 / 433E
SMT GaAs HBT MMIC
DIVIDE-BY-4, DC - 8 GHz
Features
Ultra Low SSB Phase Noise: -150 dBc/Hz
Single-Ended I/O’s
Output Power: -2 to -3.5 dBm
Single DC Supply: +3V @ 53 mA
9 mm2 Ultra Small Package: SOT26
General Description
The HMC433(E) is a low noise Divide-by-4 Static
Divider utilizing InGaP GaAs HBT technology in ultra
small surface mount SOT26 plastic packages. This
device operates from DC (with a square wave input)
to 8 GHz input frequency with a single +3V DC supply.
Single-ended inputs and outputs reduce component
count and cost. The low additive SSB phase noise of
-150 dBc/Hz at 100 kHz offset helps the user maintain
good system noise performance.
Electrical Specifications, TA = +25° C, 50 Ohm System, Vcc= +3V
Parameter
Conditions
Maximum Input Frequency
Minimum Input Frequency
Sine Wave Input. [1]
Input Power Range
Fin= 1 to 6 GHz
Fin= 6 to 8 GHz
Output Power
Fin= 4 GHz
Fin= 8 GHz
Reverse Leakage
RF Output Terminated, Fin= 4 GHz, Pin= 0 dBm
SSB Phase Noise (100 kHz offset)
Pin= 0 dBm, Fin= 4 GHz
Output Transition Time
Pin= 0 dBm, Fout= 882 MHz
Supply Current (Icc)
Vcc= +3.0V
1. Divider will operate down to DC for square-wave input signal.
Min.
8
-12
-3
-5.0
-6.5
Typ.
8.5
0.2
-2.0
-3.5
-25
-150
120
53
Max.
+12
+10
71
Units
GHz
GHz
dBm
dBm
dBm
dBm
dBm
dBc/Hz
ps
mA
4 - 72
IrrlTiniecgrfaseohpdntrsFeomsemnoaosfatiisirbtrohkingislprirtdayafrunnpiirsdtcnaeairdrsetesihegsb,esuiysdmdttheimebaeredtypldmlbiiAcvtyaranPayeAtadiorlhnroeenaymgsoluooanlDargtrkeofenDrsvtohe:idamcevr9eAreicwistt7etsopihssie8usepfspop-beulrr2.nelioiacdtSlp5iseepecavur0reetsetcya-deiinofo,3iyocftnno3atoprhtrdiae4boSftienoere3srnuraertasspcsnoupcyrb:peujipcernHFoaatcfirtvttareiieentttnogxt:aotiecnw:rtPmhdiegn9aeehhnrn7rteMgssotls.8eiaonoibwf-cfel2Aieptrh:n.5aooatH9ue0lwoton7g-wntas38oDeotvvi3e-creev2eo7ri,.ct5h3eNCnes0oor.o-r3pFOPA3Ooohpn4rrorpe3danlpiTectreii:aorocc7treinhO8o,n,1nnaod-2S3lpe-o02lulgpii9vpnyAse-pe4rW@oly7par,a0hthy:ta0i,aPntw•PtdhiR.OwtoOetnoor.w.decBa:ep.odo1hrlax-mo,i8ctn9Cet0l1ii0tn0hoe-e6rAe.d,caNleNmtoArwosmsL:rwOwfAowGonro.d-aadDln,o,agMMloADAge.0cv02oic10me68s22,-49In10c.6,

PagesPages 7
Télécharger [ HMC433E ]


Fiche technique recommandé

No Description détaillée Fabricant
HMC433 SMT GaAs HBT MMIC Hittite Microwave Corporation
Hittite Microwave Corporation
HMC433E SMT GaAs HBT MMIC Analog Devices
Analog Devices

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche