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PDF HMC8119 Data sheet ( Hoja de datos )
| Número de pieza | HMC8119 | |
| Descripción | E-Band I/Q Upconverter | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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Data Sheet
81 GHz to 86 GHz,
E-Band I/Q Upconverter
HMC8119
FEATURES
Conversion loss: 10 dB typical
Sideband rejection: 22 dBc typical
Input power for 1 dB compression (P1dB): 16 dBm typical
Input third-order intercept (IP3): 24 dBm typical
Input second-order intercept (IP2): −5 dBm typical
6× local oscillator (LO) leakage at RFOUT: −23 dBm typical
RF return loss: 12 dB typical
LO return loss: 20 dB typical
Die size: 3.601 mm × 1.609 mm × 0.05 mm
APPLICATIONS
E-band communication systems
High capacity wireless backhaul
Test and measurement
GENERAL DESCRIPTION
The HMC8119 is an integrated E-band gallium arsenide (GaAs)
pseudomorphic (pHEMT) monolithic microwave integrated
circuit (MMIC), in-phase/quadrature (I/Q) upconverter chip
that operates from 81 GHz to 86 GHz. The HMC8119 provides
a small signal conversion loss of 10 dB with 22 dBc of sideband
rejection across the frequency band. The device uses an image
rejection mixer that is driven by a 6× LO multiplier. Differential
I and Q mixer inputs are provided. The inputs can be driven
with differential I and Q baseband waveforms for direct conver-
sion applications. Alternatively, the inputs can be driven using
an external 90° hybrid and two external 180° hybrids for single-
sideband applications. All data includes the effect of a 1 mil
gold wire wedge bond on the intermediate frequency (IF) ports.
FUNCTIONAL BLOCK DIAGRAM
5 4 IFIP 6
7 8 9 10 11 12 13 14 15 16 17 18 19 20 21
3 IFIN
IFQN
2
IFQP
1
24 23 22
6×
Figure 1.
HMC8119
Rev. A
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2016 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
1 page  
HMC8119
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Drain Bias Voltage
VDAMP1, VDAMP2
VDMULT
Gate Bias Voltage
VGAMP
VGX2, VGX3
VGMIX
LO Input Power
Maximum Junction Temperature
(to Maintain 1 Million Hours Mean
Time to Failure (MTTF))
Storage Temperature Range
Operating Temperature Range
Rating
4.5 V
3V
−3 V to 0 V
−3 V to 0 V
−3 V to 0 V
10 dBm
175°C
−65°C to +150°C
−55°C to +85°C
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Data Sheet
THERMAL RESISTANCE
Table 3. Thermal Resistance
Package Type
24-Pad Bare Die [CHIP]
θJC1
73.7
Unit
°C/W
1 Based on ABLEBOND® 84-1LMIT as die attach epoxy with thermal
conductivity of 3.6 W/mK.
ESD CAUTION
Rev. A | Page 4 of 27
5 Page 
HMC8119
UPPER SIDEBAND (USB) SELECTED, IF = 1000 MHz
0
–2 TA = +25°C
TA = +85°C
–4 TA = –55°C
–6
–8
–10
–12
–14
–16
81.0 81.5 82.0 82.5 83.0 83.5 84.0 84.5 85.0 85.5 86.0
RF FREQUENCY (GHz)
Figure 24. Conversion Gain vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 1000 MHz, USB
0
–5
TA = +25°C
–10 TA = +85°C
TA = –55°C
–15
–20
–25
–30
–35
–40
–45
–50
81.0 81.5 82.0 82.5 83.0 83.5 84.0 84.5 85.0 85.5 86.0
RF FREQUENCY (GHz)
Figure 25. Sideband Rejection vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 1000 MHz, USB
30
28
26
24
22
20
18 TA = +25°C
TA = +85°C
16 TA = –55°C
14
12
10
81.0 81.5 82.0 82.5 83.0 83.5 84.0 84.5 85.0 85.5 86.0
RF FREQUENCY (GHz)
Figure 26. Input IP3 vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 1000 MHz, USB
Data Sheet
0
–2 LO = –4dBm
LO = –2dBm
LO = 0dBm
–4 LO = +2dBm
LO = +4dBm
LO = +6dBm
–6 LO = +8dBm
–8
–10
–12
–14
–16
81.0 81.5 82.0 82.5 83.0 83.5 84.0 84.5 85.0 85.5 86.0
RF FREQUENCY (GHz)
Figure 27. Conversion Gain vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 1000 MHz, USB
0
–5
LO = –4dBm
LO = –2dBm
LO = 0dBm
–10 LO = +2dBm
LO = +4dBm
–15
LO = +6dBm
LO = +8dBm
–20
–25
–30
–35
–40
–45
–50
81.0 81.5 82.0 82.5 83.0 83.5 84.0 84.5 85.0 85.5 86.0
RF FREQUENCY (GHz)
Figure 28. Sideband Rejection vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 1000 MHz, USB
30
28
26
24
22
20
LO = –4dBm
18 LO = –2dBm
LO = 0dBm
16 LO = +2dBm
LO = +4dBm
14
LO = +6dBm
LO = +8dBm
12
10
81.0 81.5 82.0 82.5 83.0 83.5 84.0 84.5 85.0 85.5 86.0
RF FREQUENCY (GHz)
Figure 29. Input IP3 vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 1000 MHz, USB
Rev. A | Page 10 of 27
11 Page | ||
| Páginas | Total 28 Páginas | |
| PDF Descargar | [ Datasheet HMC8119.PDF ] | |
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