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PDF HMC520A Data sheet ( Hoja de datos )
| Número de pieza | HMC520A | |
| Descripción | MMIC I/Q Mixer | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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Data Sheet
FEATURES
Radio frequency (RF) range: 6 GHz to 10 GHz
Local oscillator (LO) input frequency range: 6 GHz to 10 GHz
Conversion loss: 8 dB typical at 6 GHz to 10 GHz
Image rejection: 23 dBc typical at 6 GHz to 10 GHz
LO to RF isolation: 43 dB typical
LO to intermediate frequency (IF) isolation: 25 dB typical
Input third-order intercept (IP3): 19 dBm typical
Input power for 1 dB compression (P1dB): 10 dBm typical at
7.1 GHz to 8.5 GHz
Wide IF frequency range: DC to 3.5 GHz
24-terminal, 4 mm × 4 mm, ceramic leadless chip carrier
APPLICATIONS
Point to point microwave radios
Point to multipoint radios
Video satellites (VSATs)
Digital radios
Instrumentation
Automatic test equipment (ATE)
GENERAL DESCRIPTION
The HMC520A is a compact gallium arsenide (GaAs),
monolithic microwave integrated circuit (MMIC), in-phase
quadrature (I/Q) mixer in a 24-terminal, RoHS compliant,
ceramic leadless chip carrier (LCC) package. The device can
be used as either an image reject mixer or a single sideband
upconverter. The mixer uses two standard double balanced
6 GHz to 10 GHz,
GaAs, MMIC, I/Q Mixer
HMC520A
FUNCTIONAL BLOCK DIAGRAM
NIC 1
NIC 2
GND 3
RF 4
GND 5
NIC 6
HMC520A
90° HYBRID
18 NIC
17 NIC
16 GND
15 LO
14 GND
13 NIC
Figure 1.
PACKAGE
BASE
GND
mixer cells and a 90° hybrid fabricated in a GaAs, metal
semiconductor field effect transistor (MESFET) process. The
HMC520A is a much smaller alternative to a hybrid style image
reject mixer and a single sideband upconverter assembly. The
HMC520A eliminates the need for wire bonding, allowing the
use of surface-mount manufacturing techniques.
Rev. 0
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2017 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
1 page  
HMC520A
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
RF Input Power
LO Input Power
IF1 and IF2 Input Power
IF DC Current
Maximum Peak Reflow Temperature1
Continuous Power Dissipation, PDISS (TA = 85°C,
Derate 4.44 mW/°C Above 85°C)
Operating Temperature Range
Storage Temperature Range
Lead Temperature Range (Soldering 60 sec)
Electrostatic Discharge (ESD) Sensitivity
Human Body Model (HBM)
Field Induced Charged Device Model (FICDM)
Rating
20 dBm
27 dBm
20 dBm
12 mA
260°C
400 mW
−40°C to +85°C
−65°C to +150°C
−65°C to +150°C
750 V (Class 1B)
1250 V (Class C3)
1 See the Ordering Guide section.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Data Sheet
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
Table 3. Thermal Resistance
Package Type
θJA
E-24-12
175°C
θJC1
225
Unit
°C/W
1 θJC is the thermal resistance, junction to case (°C/W).
2 See JEDEC standard JESD51-2 for additional information on optimizing the
thermal impedance (PCB with 3 × 3 vias).
ESD CAUTION
Rev. 0 | Page 4 of 28
5 Page 
HMC520A
Data Sheet
DOWNCONVERTER PERFORMANCE: IF = 1500 MHz, LOWER SIDEBAND (HIGH-SIDE LO)
Data taken as an image reject mixer with external 90° hybrid at the IF ports, LO = 15 dBm, unless otherwise noted.
00
–5 –5
–10
–15
TA = +85°C
TA = +25°C
TA = –40°C
–20
5 6 7 8 9 10 11
RF FREQUENCY (GHz)
Figure 28. Conversion Gain vs. RF Frequency at Various Temperatures
50
40
30
20
10
TA = +85°C
TA = +25°C
TA = –40°C
0
5 6 7 8 9 10 11
RF FREQUENCY (GHz)
Figure 29. Image Rejection vs. RF Frequency at Various Temperatures
25
20
15
10
5
TA = +85°C
TA = +25°C
TA = –40°C
0
5 6 7 8 9 10 11
RF FREQUENCY (GHz)
Figure 30. Input IP3 vs. RF Frequency at Various Temperatures
–10
LO = 19dBm
–15 LO = 17dBm
LO = 15dBm
LO = 13dBm
–20
5 6 7 8 9 10 11
RF FREQUENCY (GHz)
Figure 31. Conversion Gain vs. RF Frequency at Various LO Powers, TA = 25°C
50
40
30
20
LO = 19dBm
LO = 17dBm
10 LO = 15dBm
LO = 13dBm
0
5 6 7 8 9 10 11
RF FREQUENCY (GHz)
Figure 32. Image Rejection vs. RF Frequency at Various LO Powers,
TA = 25°C
25
20
15
10
LO = 19dBm
LO = 17dBm
5 LO = 15dBm
LO = 13dBm
0
5 6 7 8 9 10 11
RF FREQUENCY (GHz)
Figure 33. Input IP3 vs. RF Frequency at Various LO Powers,
TA = 25°C
Rev. 0 | Page 10 of 28
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