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Número de pieza HMC589AST89E
Descripción InGaP HBT GAIN BLOCK MMIC AMPLIFIER
Fabricantes Analog Devices 
Logotipo Analog Devices Logotipo



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Typical Applications
The HMC589AST89E is ideal for:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
• IF & RF Applications
Functional Diagram
HMC589AST89E
v01.0516
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Features
P1dB Output Power: +21 dBm
Gain: 21 dB
Output IP3: +33 dBm
Single Supply: +5V
Industry Standard SOT89E Package
General Description
The HMC589AST89E is an InGaP HBT Gain
Block MMIC SMT amplifier covering DC to
4 GHz and packaged in an industry standard
SOT89E. The amplifier can be used as a cascadable
50 Ohm RF or IF gain stage as well as a LO or PA
driver with up to +19 dBm P1dB output power for
cellular/3G, FWA, CATV, microwave radio and test
equipment applications. The HMC589AST89E
offers 20 dB gain and +33 dBm output IP3 at 1
GHz while requiring only 82 mA from a single
positive supply. The HMC589AST89E InGaP HBT
gain block offers excellent output power and gain
stability over temperature.
Electrical Specifications, Vs= 5V, Rbias= 1.8 Ohm, TA = +25° C
Parameter
Min.
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
DC - 5 GHz
DC - 1.0 GHz
1.0 - 4.0 GHz
DC - 1.0 GHz
1.0 - 4.0 GHz
DC - 4 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
DC - 2.0 GHz
2.0 - 4.0 GHz
19
16
14
13
17.5
16
16
14.5
Typ.
21
19
17
16
0.008
17
10
12
8
23
19
19
19
18
33
32
31.5
29
4.0
4.5
82
Max.
102
Units
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc.,
1 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D

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HMC589AST89E pdf
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFIN)(Vcc = +5 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 8.4 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+5.5 Vdc
+10 dBm up to 1 GHz
+8 dBm from 1-4 GHz
150 °C
0.45 W
145 °C/W
-65 to +150 °C
-40 to +85 °C
Class 2
Outline Drawing
HMC589AST89E
v01.0516
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. PACKAGE BODY MATERIAL:
MOLDING COMPOUND MP-180S OR EQUIVALENT.
2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING.
3. LEAD PLATING: 100% MATTE TIN.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
HMC589AST89E RoHS-compliant Low Stress Injection Molded Plastic
[1] Max peak reflow temperature of 260 °C
[2] 4-Digit lot number XXXX
Lead Finish
100% matte Sn
MSL Rating
MSL1 [1]
Package Marking [2]
H589A
XXXX
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
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